QM300 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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QM3004D VBsemi Elec
1 N-Ch 30V Fast Switching MOSFETs TO252,30V ±20V Other QM3004D 1 Download Model
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TQM300NB06DCR RLG Taiwan Semiconductor
1 MOSFETs 60V, 25A, Dual N-Channel Power MOSFET Other TQM300NB06DCR RLG 1 Download Model
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QM300HA-HK Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin QM300HA-HK 0 Build or Request
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QM300DY-HB Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 15 Pin QM300DY-HB 0 Build or Request
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QM300HA-H Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 1-Element, NPN, Silicon QM300HA-H 0 Build or Request
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QM300HC-M Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin QM300HC-M 0 Build or Request
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QM300HA-HB Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 3-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin QM300HA-HB 0 Build or Request
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QM3003M3 UPI Semiconductor Corp
1 Power Field-Effect Transistor, 7.7A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET QM3003M3 0 Build or Request
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QM300HA-2H Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 3-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin QM300HA-2H 0 Build or Request
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QM300DY-2H Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 15 Pin QM300DY-2H 0 Build or Request
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QM3004M3 UPI Semiconductor Corp
1 Power Field-Effect Transistor, 11A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET QM3004M3 0 Build or Request
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QM300HA-24 Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 3-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin QM300HA-24 0 Build or Request
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QM3006M3 UPI Semiconductor Corp
1 Power Field-Effect Transistor, 12.7A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET QM3006M3 0 Build or Request
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QM300HA-2HB Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin QM300HA-2HB 0 Build or Request
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QM3006D UPI Semiconductor Corp
1 Power Field-Effect Transistor, 17A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 QM3006D 0 Build or Request
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QM300DY-2HB Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 15 Pin QM300DY-2HB 0 Build or Request
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QM300DY-24B Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 15 Pin QM300DY-24B 0 Build or Request
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QM3004D UPI Semiconductor Corp
1 Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 QM3004D 0 Build or Request
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QM300DY-24 Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 15 Pin QM300DY-24 0 Build or Request
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QM300HA-24B Mitsubishi Electric
1 Power Bipolar Transistor, 300A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin QM300HA-24B 0 Build or Request
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SQM300JMI100R YAGEO Corporation
1 Fixed Resistor, Metal Oxide Film, 3W, 100ohm, 350V, 5% +/-Tol, -300,300ppm/Cel, 4732, SQM300JMI100R 0 Build or Request
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SQM300JBI30K YAGEO Corporation
1 Fixed Resistor, Metal Oxide Film, 3W, 30000ohm, 350V, 5% +/-Tol, 300ppm/Cel, Through Hole Mount SQM300JBI30K 0 Build or Request
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SQM300JW-16R YAGEO Corporation
1 Fixed Resistor, Wire Wound, 3W, 16ohm, 350V, 5% +/-Tol, 4732, SQM300JW-16R 0 Build or Request
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SQM300JBI0R16 YAGEO Corporation
1 Fixed Resistor, Wire Wound, 3W, 0.16ohm, 350V, 5% +/-Tol, 300ppm/Cel, Through Hole Mount SQM300JBI0R16 0 Build or Request
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SQM300JBI180R YAGEO Corporation
1 Fixed Resistor, Wire Wound, 3W, 180ohm, 350V, 5% +/-Tol, 300ppm/Cel, Through Hole Mount SQM300JBI180R 0 Build or Request
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