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R1Q4A7218ABB-33IB1 Renesas Electronics
1 The R1Q4A7236 is a 2, 097, 152-word by 36-bit and the R1Q4A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low BGA R1Q4A7218ABB-33IB1 1 Download Model
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R1Q4A7236ABB-33IB1 Renesas Electronics
1 The R1Q4A7236 is a 2, 097, 152-word by 36-bit and the R1Q4A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low BGA R1Q4A7236ABB-33IB1 1 Download Model
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R1Q4A4436RBG-33IB0 Renesas Electronics
1 The R1Q4A4436RBG is a 4, 194, 304-word by 36-bit and the R1Q4A4418RBG is a 8, 388, 608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, BGA R1Q4A4436RBG-33IB0 1 Download Model
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R1Q4A4418RBG-33IB0 Renesas Electronics
1 The R1Q4A4436RBG is a 4, 194, 304-word by 36-bit and the R1Q4A4418RBG is a 8, 388, 608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, BGA R1Q4A4418RBG-33IB0 1 Download Model
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R1Q4A7236ABG-30RT Renesas Electronics Corporation
1 DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165 R1Q4A7236ABG-30RT 0 Build or Request
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R1Q4A3636BBG-33R Renesas Electronics Corporation
1 DDR SRAM, 1MX36, 0.3ns, CMOS, PBGA165 R1Q4A3636BBG-33R 0 Build or Request
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R1Q4A4418RBG-33IS Renesas Electronics Corporation
1 DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165 R1Q4A4418RBG-33IS 0 Build or Request
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R1Q4A7218ABB-40RT Renesas Electronics Corporation
1 QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165 R1Q4A7218ABB-40RT 0 Build or Request
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R1Q4A7218ABB-33IA Renesas Electronics Corporation
1 QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165 R1Q4A7218ABB-33IA 0 Build or Request
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R1Q4A7236ABG-40RB Renesas Electronics Corporation
1 DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165 R1Q4A7236ABG-40RB 0 Build or Request
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R1Q4A3609ABG-33R Renesas Electronics Corporation
1 SRAM R1Q4A3609ABG-33R 0 Build or Request
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R1Q4A3618BBG-50R Renesas Electronics Corporation
1 DDR SRAM, 2MX18, 0.4ns, CMOS, PBGA165 R1Q4A3618BBG-50R 0 Build or Request
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R1Q4A7236ABB-33RB Renesas Electronics Corporation
1 QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165 R1Q4A7236ABB-33RB 0 Build or Request
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R1Q4A7236ABB-30RA Renesas Electronics Corporation
1 QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165 R1Q4A7236ABB-30RA 0 Build or Request
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R1Q4A3618ABG-30R Renesas Electronics Corporation
1 SRAM R1Q4A3618ABG-30R 0 Build or Request
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R1Q4A4436RBG-33IS Renesas Electronics Corporation
1 DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165 R1Q4A4436RBG-33IS 0 Build or Request
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R1Q4A7218ABG-30IB Renesas Electronics Corporation
1 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165 R1Q4A7218ABG-30IB 0 Build or Request
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R1Q4A7218ABG-30IA Renesas Electronics Corporation
1 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165 R1Q4A7218ABG-30IA 0 Build or Request
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R1Q4A7218ABB-19IB Renesas Electronics Corporation
1 DDR II SRAM R1Q4A7218ABB-19IB 0 Build or Request
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R1Q4A4418RBG-33RB Renesas Electronics Corporation
1 DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165 R1Q4A4418RBG-33RB 0 Build or Request
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R1Q4A7236ABB-40IA Renesas Electronics Corporation
1 QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165 R1Q4A7236ABB-40IA 0 Build or Request
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R1Q4A7236ABG-30RA Renesas Electronics Corporation
1 DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165 R1Q4A7236ABG-30RA 0 Build or Request
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R1Q4A7218ABG-33RA Renesas Electronics Corporation
1 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165 R1Q4A7218ABG-33RA 0 Build or Request
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R1Q4A7236ABB-30RT Renesas Electronics Corporation
1 QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165 R1Q4A7236ABB-30RT 0 Build or Request
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R1Q4A3609ABG-50R Renesas Electronics Corporation
1 Standard SRAM, 4MX9, 0.45ns, CMOS, PBGA165 R1Q4A3609ABG-50R 0 Build or Request
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