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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	R1QBA7236ABB-19IB1 Renesas Electronics	1	The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low	BGA	R1QBA7236ABB-19IB1	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA4436RBG-19IB0 Renesas Electronics	1	The R1QBA4436RBG is a 4, 194, 304-word by 36-bit and the R1QBA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Spee	BGA	R1QBA4436RBG-19IB0	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA4436RBG-18IB0 Renesas Electronics	1	The R1QBA4436RBG is a 4, 194, 304-word by 36-bit and the R1QBA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Spee	BGA	R1QBA4436RBG-18IB0	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA7218ABB-19IB1 Renesas Electronics	1	The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low	BGA	R1QBA7218ABB-19IB1	3D model available Symbol and footprint available 3	1 Download Model

	R1QBA7236ABB-20IB1 Renesas Electronics	1	The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low	BGA	R1QBA7236ABB-20IB1	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA7236ABG-20IA0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read	BGA	R1QBA7236ABG-20IA0	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA7218ABB-20IB0 Renesas Electronics	1	The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low	BGA	R1QBA7218ABB-20IB0	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA7218ABB-20IB1 Renesas Electronics	1	The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low	BGA	R1QBA7218ABB-20IB1	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA7218ABG-20IA0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read	BGA	R1QBA7218ABG-20IA0	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA7218ABG-22IA0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read	BGA	R1QBA7218ABG-22IA0	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA7218ABG-22IB0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read	BGA	R1QBA7218ABG-22IB0	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA4418RBG-18IB0 Renesas Electronics	0	The R1QBA4436RBG is a 4, 194, 304-word by 36-bit and the R1QBA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Spee	BGA	R1QBA4418RBG-18IB0	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA4418RBG-19IB0 Renesas Electronics	0	The R1QBA4436RBG is a 4, 194, 304-word by 36-bit and the R1QBA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Spee	BGA	R1QBA4418RBG-19IB0	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA3618CBG-22RT Renesas Electronics Corporation	1	QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165		R1QBA3618CBG-22RT	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1QBA4436RBG-19RB Renesas Electronics Corporation	1	DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165		R1QBA4436RBG-19RB	3D model not available Symbol and footprint not available 0	0 Build or Request

	R1QBA4436RBG-19RS Renesas Electronics Corporation	1	DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165		R1QBA4436RBG-19RS	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1QBA7236ABB Renesas Electronics Corporation	1	DDR II Plus SRAM		R1QBA7236ABB	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1QBA7236ABB-20IA Renesas Electronics Corporation	1	DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165		R1QBA7236ABB-20IA	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1QBA3636CBG-19IT Renesas Electronics Corporation	1	QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165		R1QBA3636CBG-19IT	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1QBA3618CBG-20RT Renesas Electronics Corporation	1	QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165		R1QBA3618CBG-20RT	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1QBA3636CBB-19IB Renesas Electronics Corporation	1	DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165		R1QBA3636CBB-19IB	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1QBA4436RBG-22RT Renesas Electronics Corporation	1	DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165		R1QBA4436RBG-22RT	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1QBA7218ABB Renesas Electronics Corporation	1	DDR II Plus SRAM		R1QBA7218ABB	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1QBA3636CBB-22RB Renesas Electronics Corporation	1	DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165		R1QBA3636CBB-22RB	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1QBA7218ABB-19IS Renesas Electronics Corporation	1	DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165		R1QBA7218ABB-19IS	3D model not available Symbol and footprint not available 0	0 Build or Request
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