R380E Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IPP65R380E6 Infineon	1	Infineon IPP65R380E6 MOSFET Transistor	Transistor Outline, Vertical	IPP65R380E6	3D model available Symbol and footprint available 3	1 Download Model
	R380EX-02 RadiSys	1	Microprocessor Circuit, CMOS, PQFP208		R380EX-02	3D model not available Symbol and footprint not available 0	0 Build or Request
	R380EX-02-R RadiSys	1	Micro Peripheral IC		R380EX-02-R	3D model not available Symbol and footprint not available 0	0 Build or Request
	PSMN4R3-80ES Nexperia	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA		PSMN4R3-80ES	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPD65R380E6BTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IPD65R380E6BTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	PSMN4R3-80ES,127 Nexperia	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA		PSMN4R3-80ES,127	3D model not available Symbol and footprint not available 0	0 Build or Request
	PSMN3R3-80ES NXP Semiconductors	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA		PSMN3R3-80ES	3D model not available Symbol and footprint not available 0	0 Build or Request
	PSMN3R3-80ES,127 NXP Semiconductors	1	Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		PSMN3R3-80ES,127	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPP65R380E6XKSA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IPP65R380E6XKSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD65R380E6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		IPD65R380E6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPA60R380E6 Infineon Technologies AG	1	Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IPA60R380E6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R380E6 Infineon Technologies AG	1	Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IPB65R380E6	3D model not available Symbol and footprint not available 0	0 Build or Request
	PSMN4R3-80ES,127 NXP Semiconductors	1	Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		PSMN4R3-80ES,127	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPA60R380E6XKSA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IPA60R380E6XKSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	PSMN3R3-80ES Nexperia	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA		PSMN3R3-80ES	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPD60R380E6ATMA2 Infineon Technologies AG	1	Power Field-Effect Transistor		IPD60R380E6ATMA2	3D model not available Symbol and footprint not available 0	0 Build or Request
	PFE4KR380E Ohmite Mfg Co	1	Resistor, Wire Wound, 0.38ohm, 10% +/-Tol, -500,500ppm/Cel,		PFE4KR380E	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPI65R380E6 Infineon Technologies AG	1	Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA		IPI65R380E6	3D model not available Symbol and footprint not available 0	0 Build or Request
	PFE4JR380E Ohmite Mfg Co	1	Resistor, Wire Wound, 0.38ohm, 5% +/-Tol, -500,500ppm/Cel,		PFE4JR380E	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPA65R380E6XKSA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IPA65R380E6XKSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	SLF65R380E7 Maplesemi	1	650V N-channel Super-Junction MOSFET with 11A continuous drain current, 380mΩ max RDS(on) at VGS = 10V, low gate charge of 15.5nC, and 100% avalanche tested for high reliability in switching power applications.		SLF65R380E7	3D model not available Symbol and footprint not available 0	0 Build or Request
	SLF_P65R380E7C Maplesemi	1	650V N-Channel Super-JMOSFET with 11A continuous drain current, 318mOhm typical RDS(on) at VGS = 10V, low gate charge of 16.5nC, and 100% avalanche tested for high ruggedness and ultra-fast switching performance.		SLF_P65R380E7C	3D model not available Symbol and footprint not available 0	0 Build or Request
	SLF_P70R380E7C Maplesemi	1	700V N-channel Super-JMOSFET with 11A continuous drain current, 318mΩ typical RDS(on) at VGS = 10V, low gate charge of 16.5nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications.		SLF_P70R380E7C	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPA65R380E6 Infineon Technologies AG	1	Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IPA65R380E6	3D model not available Symbol and footprint not available 0	0 Build or Request
	SR380E-H Formosa Microsemi Co Ltd	1	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 80V V(RRM), Silicon, DO-201AD		SR380E-H	3D model not available Symbol and footprint not available 0	0 Build or Request
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