RAJ29 Model Download Search Results
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RAJ2930004AGM
Renesas Electronics
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1 | The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter applications. Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side). In addition, it boasts superior CMTI (Common Mode Transient Immunity) performance at 150 V/ns or higher, providing reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in | Small Outline Packages | RAJ2930004AGM |
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RAJ2930104AGM
Renesas Electronics
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1 | The RAJ2930104AGM is a gate driver IC for IGBT and SiC MOSFET gate drive in high-voltage inverter applications. Integrated 3.75kVrms micro-isolators provide data transfer with high-voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side). In addition, it boasts superior common-mode transient immunity (CMTI) performance of over 150V/ns, ensuring reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in inver | Small Outline Packages | RAJ2930104AGM |
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![Part Image](["https://componentsearchengine.com/2D/0T/17311758.3.1.png",null,null])
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