RBE03 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	RBE037N10R1SZN6#HB0 Renesas Electronics	1	REXFET-1 N-Channel Power MOSFET150 V - 200 A - 3.4 mΩ - TOLL The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.	Other	RBE037N10R1SZN6#HB0	3D model available Symbol and footprint available 3	1 Download Model
	RBE031N08R1SZN6#HB0 Renesas Electronics	1	The RBE031N08R1SZN6 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.	Other	RBE031N08R1SZN6#HB0	3D model available Symbol and footprint available 3	1 Download Model
	RBE030N04R0SZN6#HB0 Renesas Electronics	1	The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system.	Other	RBE030N04R0SZN6#HB0	3D model available Symbol and footprint available 3	1 Download Model
	RBE039N15R1SZQ4#GB0 Renesas Electronics	1	REXFET-1 N-Channel Power MOSFET150 V - 190 A - 3.9 mΩ - TOLL	Other	RBE039N15R1SZQ4#GB0	3D model available Symbol and footprint available 3	1 Download Model

	RBE034N15R1SZQ4#GB0 Renesas Electronics	1	REXFET-1 N-Channel Power MOSFET150 V - 200 A - 3.4 mΩ - TOLL	Other	RBE034N15R1SZQ4#GB0	3D model available Symbol and footprint available 3	1 Download Model
	RBE034N15R1SZPW#KB0 Renesas Electronics	1	REXFET-1 N-CH MOSFET 150V, 200A	Other	RBE034N15R1SZPW#KB0	3D model not available Symbol and footprint available 2	1 Download Model
	RBE035N04R0SZN6#HB0 Renesas Electronics	1	The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system.	Other	RBE035N04R0SZN6#HB0	3D model available Symbol and footprint available 3	1 Download Model
	RBE039N15R1SZPW#KB0 Renesas Electronics	1	The RBE039N15R1SZPW N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for ultra-compact and optimal thermal performance.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.	Other	RBE039N15R1SZPW#KB0	3D model not available Symbol and footprint available 2	1 Download Model
	RBE-030-UBAS-R RECOM Power	1	Power Transformers PWR / Flyback / 6.9H ,16.5mm × 15.5mm × 7.2mm,1500 vdc	Other	RBE-030-UBAS-R	3D model available Symbol and footprint available 3	1 Download Model
	RBE-030-UBAS-CT RECOM Power	1	PWR / Flyback / 6.9?H		RBE-030-UBAS-CT	3D model available Symbol and footprint not available 1	1 Download Model
	RBE-038-WH5S-CT RECOM Power	1	PWR / Flyback / 36?H		RBE-038-WH5S-CT	3D model available Symbol and footprint not available 1	1 Download Model

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