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RMQSDA3636DGBA-182#AC0
Renesas Electronics
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1 | The RMQSDA3636DGBA is a 1, 048, 576-word by 36-bit and the RMQSDA3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp | BGA | RMQSDA3636DGBA-182#AC0 |
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RMQSDA3618DGBA-182#AC0
Renesas Electronics
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1 | The RMQSDA3636DGBA is a 1, 048, 576-word by 36-bit and the RMQSDA3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp | BGA | RMQSDA3618DGBA-182#AC0 |
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RMQSDA3636DGBA-202#AC0
Renesas Electronics Corporation
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1 | QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165 | RMQSDA3636DGBA-202#AC0 |
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RMQSDA3618DGBA-202#AC0
Renesas Electronics Corporation
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1 | QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165 | RMQSDA3618DGBA-202#AC0 |
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