S2BAF Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
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S2BAF SUNMATE electronic Co., LTD
1 Surface mount silicon rectifier diode S2AAF with 50 to 1000V peak repetitive reverse voltage, 2.0A average rectified output current, low forward voltage drop, and operating temperature range from -65 to +150°C.Surface mount silicon rectifier diode S2AAF with 50 to 1000V peak repetitive reverse voltage, 2.0A average rectified output current, low forward voltage drop, and operating temperature range from -65 to +150°C.Surface mount silicon rectifier diode S2AAF with 50 to 1000V peak repetitive reverse voltage, 2.0A average rectified output current, low forward voltage drop, and operating temperature range from -65 to +150°C.Surface mount silicon rectifier diode with 2.0 A average rectified current, 50 to 1000 V peak repetitive reverse voltage, low forward voltage drop, and 16°C/W thermal resistance, suited for automated assembly.Surface mount silicon rectifier diode with 2.0 A average rectified current, 50 to 1000 V peak repetitive reverse voltage, low forward voltage drop, and 16°C/W thermal resistance, suited for automated assembly and high-current applications. S2BAF 0 Build or Request
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S2BAF Luguang Electronic Technology Co Ltd
1 Rectifier Diode, Case Style : SMAF; IF (A) : 2.0; VRRM (V) : 100; IFSM (A) : 50; VF (V) : 1.2; @IF (A): 2.0; IR (µA) TA=25ºC: 5.0 S2BAF 0 Build or Request
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S2BAF3 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AC S2BAF3 0 Build or Request
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S2BAF3G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AC S2BAF3G 0 Build or Request
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S2BAF4 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AC S2BAF4 0 Build or Request
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S2BAF4G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AC S2BAF4G 0 Build or Request
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S2BAF2 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AC S2BAF2 0 Build or Request
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S2BAF2G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AC S2BAF2G 0 Build or Request
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GS2BAF6 Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC GS2BAF6 0 Build or Request
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HS2BAF4G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AC HS2BAF4G 0 Build or Request
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ES2BAF5 Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC ES2BAF5 0 Build or Request
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GS2BAF5 Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC GS2BAF5 0 Build or Request
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HS2BAF3 Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC HS2BAF3 0 Build or Request
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ES2BAF2 Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC ES2BAF2 0 Build or Request
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HS2BAF4 Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC HS2BAF4 0 Build or Request
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US2BAF SUNMATE electronic Co., LTD
1 Surface mount ultra-fast rectifier diode with 2.0A average rectified current, 50 to 1000V repetitive reverse voltage, low forward voltage drop, and operating temperature range of -50 to +150°C. US2BAF 0 Build or Request
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ES2BAF2 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC ES2BAF2 0 Build or Request
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RS2BAF4G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AC RS2BAF4G 0 Build or Request
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ES2BAF4 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC ES2BAF4 0 Build or Request
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ES2BAF Luguang Electronic Technology Co Ltd
1 Fast Recovery Diode, Case Style : SMAF; IAV (A) : 2; VRRM (V) : 100; IFSM (A) : 50; VF (V): 0.95; @IAV (A): 2; IR (µA) TA=25ºC: 5; TRR (nS) : 25 ES2BAF 0 Build or Request
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GS2BAF SUNMATE electronic Co., LTD
1 Surface mount silicon rectifier diode with 2.0A average forward current, 50 to 1000V repetitive peak reverse voltage range, low reverse leakage, high surge current capability, and operating junction temperature from -65 to +175°C. GS2BAF 0 Build or Request
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ES2BAF3G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC ES2BAF3G 0 Build or Request
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ES2BAF3 Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC ES2BAF3 0 Build or Request
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HS2BAF2 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AC HS2BAF2 0 Build or Request
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GS2BAF2 Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC GS2BAF2 0 Build or Request
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