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S6BC
Microdiode Semiconductor (MDD)
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1 | Rectifier Diode | S6BC |
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70V3579S6BC
Renesas Electronics
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1 | The 70V3579 is a high-speed 32K × 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3579 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3579S6BC |
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70V3389S6BC
Renesas Electronics
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1 | The 70V3389 is a high-speed 64K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3389 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3389S6BC |
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70V3579S6BCI
Renesas Electronics
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1 | The 70V3579 is a high-speed 32K × 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3579 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3579S6BCI |
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70V3579S6BCI8
Renesas Electronics
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1 | The 70V3579 is a high-speed 32K × 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3579 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3579S6BCI8 |
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70V3569S6BC8
Renesas Electronics
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1 | The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3569S6BC8 |
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70V3389S6BC8
Renesas Electronics
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1 | The 70V3389 is a high-speed 64K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3389 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3389S6BC8 |
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70V3379S6BC8
Renesas Electronics
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1 | The 70V3379 is a high-speed 32K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3379 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3379S6BC8 |
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70V3579S6BC8
Renesas Electronics
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1 | The 70V3579 is a high-speed 32K × 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3579 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3579S6BC8 |
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70V3379S6BC
Renesas Electronics
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1 | The 70V3379 is a high-speed 32K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3379 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3379S6BC |
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70V3569S6BC
Renesas Electronics
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1 | The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3569S6BC |
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P260D-D31BS6BC10K
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 10000ohm, 10% +/-Tol, 1 Turn(s), | P260D-D31BS6BC10K |
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P261D-D12BS6BC5K
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 5000ohm, 10% +/-Tol, 1 Turn(s) | P261D-D12BS6BC5K |
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P260P-S4BS6BC1MEG
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 1000000ohm, 10% +/-Tol, 1 Turn(s) | P260P-S4BS6BC1MEG |
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P261D-S11AS6BC5K
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 5000ohm, 10% +/-Tol, 1 Turn(s), | P261D-S11AS6BC5K |
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P261P-S2AS6BC10K
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 10000ohm, 10% +/-Tol, 1 Turn(s) | P261P-S2AS6BC10K |
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P261P-D2AS6BC50K
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 50000ohm, 10% +/-Tol, 1 Turn(s) | P261P-D2AS6BC50K |
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P261P-S1AS6BC500K
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 500000ohm, 10% +/-Tol, 1 Turn(s) | P261P-S1AS6BC500K |
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P261D-D42AS6BC50K
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 50000ohm, 10% +/-Tol, 1 Turn(s), | P261D-D42AS6BC50K |
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P260D-D42BS6BC200K
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 200000ohm, 10% +/-Tol, 1 Turn(s) | P260D-D42BS6BC200K |
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P260S-D1BS6BC50K
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 50000ohm, 10% +/-Tol, 1 Turn(s) | P260S-D1BS6BC50K |
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P261S-S4BS6BC200K
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 200000ohm, 10% +/-Tol, 1 Turn(s) | P261S-S4BS6BC200K |
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P260D-D32AS6BC2K
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 2000ohm, 10% +/-Tol, 1 Turn(s) | P260D-D32AS6BC2K |
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IDT70V3579S6BC
Integrated Device Technology Inc
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1 | Multi-Port SRAM, 32KX36, 6ns, CMOS, PBGA256 | IDT70V3579S6BC |
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P261S-S4BS6BC10K
TT Electronics Resistors
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1 | Potentiometer, Conductive Plastic, 0.25W, 10000ohm, 10% +/-Tol, 1 Turn(s) | P261S-S4BS6BC10K |
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