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Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Transistor Silicon PNP Epitaxial Type Transistor Outline, Vertical 2SA1837(F,M) 1 Download Model
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2SA1837 Toshiba
1 Trans GP BJT PNP 230V 1A 3-Pin(3+Tab) TO-220NIS Transistor Outline, Vertical 2SA1837 1 Download Model
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71V35761SA183BGG8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGG8 1 Download Model
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71V35761SA183BG8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BG8 1 Download Model
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71V35761SA183BQG Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BQG 1 Download Model
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71V35761SA183BGG Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGG 1 Download Model
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71V35761SA183BGGI Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGGI 1 Download Model
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71V35761SA183BQG8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BQG8 1 Download Model
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71V35761SA183BG Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BG 1 Download Model
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71V35761SA183BGI Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGI 1 Download Model
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2SA1832 Toshiba
1 PNP Bipolar Transistor, -50 V, -0.15 A, SOT-416(SSM) Other 2SA1832 1 Download Model
Part Image Part Image 1 Bipolar Transistors - BJT SOT23 (3-Pin) 2SA1832-GR,LF 1 Download Model
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71V35761SA183BGI8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGI8 1 Download Model
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71V35761SA183BGGI8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGGI8 1 Download Model
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SA18350E7-3.999-FT&R Sunny Electronics Corp
1 Parallel - Fundamental Quartz Crystal, 3.999MHz Nom SA18350E7-3.999-FT&R 0 Build or Request
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SA18330E8-24.000-S Sunny Electronics Corp
1 Parallel - 3Rd Overtone Quartz Crystal, 24MHz Nom SA18330E8-24.000-S 0 Build or Request
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SA18315A8-1.700-I Sunny Electronics Corp
1 Parallel - Fundamental Quartz Crystal, 1.7MHz Nom SA18315A8-1.700-I 0 Build or Request
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SA18315C7-30.000-IT&R Sunny Electronics Corp
1 Parallel - 3Rd Overtone Quartz Crystal, 30MHz Nom SA18315C7-30.000-IT&R 0 Build or Request
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SA18330A7-7.999-G Sunny Electronics Corp
1 Parallel - Fundamental Quartz Crystal, 7.999MHz Nom SA18330A7-7.999-G 0 Build or Request
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SA18330A6-2.000-I Sunny Electronics Corp
1 Parallel - Fundamental Quartz Crystal, 2MHz Nom SA18330A6-2.000-I 0 Build or Request
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SA18315A6-3.000-S Sunny Electronics Corp
1 Parallel - Fundamental Quartz Crystal, 3MHz Nom SA18315A6-3.000-S 0 Build or Request
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SA18350A6-4.999-GT&R Sunny Electronics Corp
1 Parallel - Fundamental Quartz Crystal, 4.999MHz Nom SA18350A6-4.999-GT&R 0 Build or Request
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SA18330A8-2.000-ST&R Sunny Electronics Corp
1 Parallel - Fundamental Quartz Crystal, 2MHz Nom SA18330A8-2.000-ST&R 0 Build or Request
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SA18315A8-3.499-GT&R Sunny Electronics Corp
1 Parallel - Fundamental Quartz Crystal, 3.499MHz Nom SA18315A8-3.499-GT&R 0 Build or Request
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SA18315E8-3.57945-S Sunny Electronics Corp
1 Parallel - Fundamental Quartz Crystal, 3.57945MHz Nom SA18315E8-3.57945-S 0 Build or Request
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