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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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SA200 PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 500W, 200V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 SA200 0 Build or Request
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SA200 Won-Top Electronics Co Ltd
1 Trans Voltage Suppressor Diode, 500W, 200V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 SA200 0 Build or Request
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SA200 Promax-Johnton Electronic Corporation
1 Trans Voltage Suppressor Diode, 500W, 200V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 SA200 0 Build or Request
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SA200 Formosa Microsemi Co Ltd
1 Trans Voltage Suppressor Diode, 500W, 200V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 SA200 0 Build or Request
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DSA-200100L Panasonic
1 DSA200100L, PNP Bipolar Transistor, -100 mA -50 V HFE:210 150 MHz, 3-Pin Mini3 G3 B SOT23 (3-Pin) DSA-200100L 1 Download Model
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DSA-2002R0L Panasonic
1 DSA2002R0L, PNP Bipolar Transistor, -500 mA -50 V HFE:120 130 MHz, 3-Pin Mini3 G3 B B SOT23 (3-Pin) DSA-2002R0L 1 Download Model
Part Image Part Image 1 Automotive Grade Slow Blow SMD Fuses, 1206 Fuses Chip SF-1206SA200M-2 1 Download Model
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71V35761SA200BQGI8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA200BQGI8 1 Download Model
Part Image Part Image 1 Precision Thin Film Chip Resistor Array Superior Moisture Resistivity Other ACASA2001B2642P5AT 1 Download Model
Part Image Part Image 1 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator Other SIT8944BA-22-33SA2.000000 1 Download Model
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IDT71V25761YSA200BGI8 Renesas Electronics
1 Renesas Electronics BGA IDT71V25761YSA200BGI8 1 Download Model
Part Image Part Image 1 Precision Thin Film Chip Resistor Array Superior Moisture Resistivity Other ACASA2001S2001P1AT 1 Download Model
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71V35761SA200BG8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA200BG8 1 Download Model
Part Image Part Image 1 Precision Thin Film Chip Resistor Array Superior Moisture Resistivity Other ACASA2001E2001P1AT 1 Download Model
Part Image Part Image 1 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator Other SIT8944BE-13-18SA2.000000 1 Download Model
Part Image Part Image 1 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator Other SIT8944BE-71-18SA2.000000 1 Download Model
Part Image Part Image 1 Resistor Networks & Arrays 20K/20Kohm .1%/.05% 25/15ppm 0612 Other ACASA2002S2002P100 1 Download Model
Part Image Part Image 1 Resistor Networks & Arrays 20K/20Kohm .1%/.05% 25/15ppm 0612 Auto Other ACASA2002S2002P1AT 1 Download Model
Part Image Part Image 1 NDK 20MHz Crystal Unit ±15ppm SMD 4-Pin 3.2 x 2.5 x 0.55mm Other NX3225SA-20.000M-STD-CRS-2 1 Download Model
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DSA-2001S0L Panasonic
1 DSA2001S0L, PNP Bipolar Transistor, -100 mA -50 V HFE:290 150 MHz, 3-Pin Mini3 G3 B SOT23 (3-Pin) DSA-2001S0L 1 Download Model
Part Image Part Image 1 Surface Mount Fuses 2A 110V TIME DELAY Fuses Chip SF-1206SA200W-2 1 Download Model
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71V35761SA200BGG Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA200BGG 1 Download Model
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71V35761SA200BQG Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA200BQG 1 Download Model
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71V35761SA200BGI Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA200BGI 1 Download Model
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71V35761SA200BQGI Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA200BQGI 1 Download Model
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