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SCTW35N65G2VAG STMicroelectronics
1 • AEC-Q101 qualified• Very fast and robust intrinsic body diode• Low capacitanceAutomotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package Transistor Outline, Vertical SCTW35N65G2VAG 1 Download Model
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SCTW35N65G2V STMicroelectronics
1 Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package Other SCTW35N65G2V 1 Download Model
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