SGB-0 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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1N4007SGB0 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon Diodes, Axial Diameter Horizontal Mounting 1N4007SGB0 1 Download Model
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SGB-030-14-090-SMA Fairview Microwave Inc
1 Wide Band Low Power Amplifier SGB-030-14-090-SMA 0 Build or Request
Part Image Part Image 1 Fixing clamp; ØBundle : 7mm; W: 13mm; steel; Cover material: EPDM SGB-07 1 Download Model
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HC49US-GB0F18-5.990 ILSI America LLC
1 Parallel - Fundamental Quartz Crystal, 5.99MHz Nom HC49US-GB0F18-5.990 0 Build or Request
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SF17SGB0G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1A, 500V V(RRM), Silicon SF17SGB0G 0 Build or Request
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HC49US-GB0F18-7.000 ILSI America LLC
1 Parallel - Fundamental Quartz Crystal, 7MHz Nom HC49US-GB0F18-7.000 0 Build or Request
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IL3S-GB0F18-10.000 ILSI America LLC
1 Parallel - Fundamental Quartz Crystal, 10MHz Nom IL3S-GB0F18-10.000 0 Build or Request
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HER107SGB0 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon HER107SGB0 0 Build or Request
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1N4006SGB0G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon 1N4006SGB0G 0 Build or Request
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1N4006SGB0 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon 1N4006SGB0 0 Build or Request
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HC49US-GB0F18-3.200 ILSI America LLC
1 Parallel - Fundamental Quartz Crystal, 3.2MHz Nom HC49US-GB0F18-3.200 0 Build or Request
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1N4004SGB0 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon 1N4004SGB0 0 Build or Request
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MAS9165ASGB06 KEMET Corporation
1 Fixed Positive LDO Regulator, 1.2V, PDSO5 MAS9165ASGB06 0 Build or Request
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HC49US-GB0F18-9.000 ILSI America LLC
1 Parallel - Fundamental Quartz Crystal, 9MHz Nom HC49US-GB0F18-9.000 0 Build or Request
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FR101SGB0G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1A, 50V V(RRM), Silicon FR101SGB0G 0 Build or Request
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IL3S-GB0F18-3.990 ILSI America LLC
1 Parallel - Fundamental Quartz Crystal, 3.99MHz Nom IL3S-GB0F18-3.990 0 Build or Request
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V8274128N24SXSG-B0 Mosel Vitelic Corporation
1 DDR DRAM Module, 128MX72, 0.75ns, CMOS V8274128N24SXSG-B0 0 Build or Request
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FR106SGB0G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon FR106SGB0G 0 Build or Request
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HC49US-GB0318-27.000 ILSI America LLC
1 Parallel - 3Rd Overtone Quartz Crystal, 27MHz Nom HC49US-GB0318-27.000 0 Build or Request
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HER105SGB0G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon HER105SGB0G 0 Build or Request
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FR102SGB0 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1A, 100V V(RRM), Silicon FR102SGB0 0 Build or Request
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HER101SGB0 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1A, 50V V(RRM), Silicon HER101SGB0 0 Build or Request
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SGB04N60 Infineon Technologies AG
1 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-263AB SGB04N60 0 Build or Request
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IL3S-GB0F18-9.990 ILSI America LLC
1 Parallel - Fundamental Quartz Crystal, 9.99MHz Nom IL3S-GB0F18-9.990 0 Build or Request
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FR101SGB0 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 1A, 50V V(RRM), Silicon FR101SGB0 0 Build or Request
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