SIHD2 Model Download Search Results
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SIHD2N80E-GE3
Vishay
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1 | N-Channel 800 V 2.8A (Tc) 62.5W (Tc) Surface Mount TO-252AA | Other | SIHD2N80E-GE3 |
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SIHD240N65E-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 16A I(D), 650V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | SIHD240N65E-GE3 |
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SIHD2N80AE-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 2.9A I(D), 800V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | SIHD2N80AE-GE3 |
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SIHD240N65ET1-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 16A I(D), 650V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | SIHD240N65ET1-GE3 |
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SIHD240N60E-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor | SIHD240N60E-GE3 |
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SIHD240N65ET4-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 16A I(D), 650V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | SIHD240N65ET4-GE3 |
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![Part Image](["https://componentsearchengine.com/Images/9/SIHD2N80E-GE3.jpg",null,null])
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