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SIR890DP-T1-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SIR890DP-T1-GE3 |
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SIR890DP-T1-GE3
Vishay Siliconix
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1 | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SIR890DP-T1-GE3 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/soic_8.jpg"])
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