SPI11 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	SPI11N65C3XK Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	SPI11N65C3XK	3D model not available Symbol and footprint not available 0	0 Build or Request
	SPI11N60C3 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	SPI11N60C3	3D model not available Symbol and footprint not available 0	0 Build or Request
	SPI110 OPT Industries Inc	1	General Purpose Inductor, 5000uH, 1 Element, SMD	SPI110	3D model not available Symbol and footprint not available 0	0 Build or Request
	SPI11N65C3 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	SPI11N65C3	3D model not available Symbol and footprint not available 0	0 Build or Request

	SPI11N65C3 Rochester Electronics LLC	1	11A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3	SPI11N65C3	3D model not available Symbol and footprint not available 0	0 Build or Request
	SPI11N60S5 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	SPI11N60S5	3D model not available Symbol and footprint not available 0	0 Build or Request
	SPI11N65C3HKSA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	SPI11N65C3HKSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	SPI11N60C3HKSA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	SPI11N60C3HKSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	SPI11N60CFD Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	SPI11N60CFD	3D model not available Symbol and footprint not available 0	0 Build or Request
	SPI11N60C3XKSA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	SPI11N60C3XKSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	SPI11N60S5HKSA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	SPI11N60S5HKSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	SPI11N60C3XK Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	SPI11N60C3XK	3D model not available Symbol and footprint not available 0	0 Build or Request
	SPI11N60CFDHKSA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	SPI11N60CFDHKSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	SPI11N65C3XKSA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	SPI11N65C3XKSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	ASPI-1109T561-M-T Abracon Corporation	1	General Purpose Inductor, 560uH, 20%, 1 Element, SMD	ASPI-1109T561-M-T	3D model not available Symbol and footprint not available 0	0 Build or Request

	ASPI-1109T-120-M Abracon Corporation	1	1 ELEMENT, 12uH, GENERAL PURPOSE INDUCTOR, SMD, ROHS COMPLIANT	ASPI-1109T-120-M	3D model not available Symbol and footprint not available 0	0 Build or Request
	ASPI-1109T681-M-T Abracon Corporation	1	General Purpose Inductor, 680uH, 20%, 1 Element, SMD	ASPI-1109T681-M-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	ASPI-1109T-1R0 Abracon Corporation	1	General Purpose Inductor, 1uH, 20%, 1 Element, SMD, 5137	ASPI-1109T-1R0	3D model not available Symbol and footprint not available 0	0 Build or Request
	ASPI-1109T180-M Abracon Corporation	1	General Purpose Inductor, 18uH, 20%, 1 Element, SMD	ASPI-1109T180-M	3D model not available Symbol and footprint not available 0	0 Build or Request
	ASPI-1109T180-M-T Abracon Corporation	1	General Purpose Inductor, 18uH, 20%, 1 Element, SMD	ASPI-1109T180-M-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	ASPI-1109T560-M-T Abracon Corporation	1	General Purpose Inductor, 56uH, 20%, 1 Element, SMD	ASPI-1109T560-M-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	JSPI1150A Jiangsu JieJie Microelectronics Co Ltd	1	1A Schottky Barrier Rectifier in SOD-123FL package with 150V maximum repetitive peak reverse voltage, ultra low forward voltage drop, and 1.0A average forward current, lead-free and surface mountable.	JSPI1150A	3D model not available Symbol and footprint not available 0	0 Build or Request
	ASPI-1109T-270-M Abracon Corporation	1	1 ELEMENT, 27uH, GENERAL PURPOSE INDUCTOR, SMD, ROHS COMPLIANT	ASPI-1109T-270-M	3D model not available Symbol and footprint not available 0	0 Build or Request
	ASPI-1109T-561M Abracon Corporation	1	1 ELEMENT, 560uH, GENERAL PURPOSE INDUCTOR, SMD, ROHS COMPLIANT	ASPI-1109T-561M	3D model not available Symbol and footprint not available 0	0 Build or Request
	ASPI-1109T-390M Abracon Corporation	1	1 ELEMENT, 39uH, GENERAL PURPOSE INDUCTOR, SMD, ROHS COMPLIANT	ASPI-1109T-390M	3D model not available Symbol and footprint not available 0	0 Build or Request
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