T40A4 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 VDD = VDDQ = 1.2V ά60mV On-die, internal, adjustable VREFDQ generation 1.2V pseudo open-drain I/O TC maximum up to 95ιC 64ms, 8192-cycle refresh up to 85ιC 32ms, 8192-cycle refresh at >85ιC to 95ιC 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n-bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command/Address latency (CAL) Multipurpose register READ and WRITE capability BGA MT40A4G4SA-062E:F 1 Download Model
Part Image Part Image 1 Quartz Dc Hour Meter 10-80Vdc Round |Enm T40A45 T40A45 1 Download Model
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MT40A4G4DVN-075H:E Micron Technology Inc
1 DDR4 DRAM, 4GX4, CMOS, PBGA78 MT40A4G4DVN-075H:E 0 Build or Request
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GST40A48-P1J Mean Well
1 AC-DC REGULATED POWER SUPPLY GST40A48-P1J 0 Build or Request
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MT40A4G4VA-068IT:B Micron Technology Inc
1 DDR4 DRAM, 4GX4, CMOS, PBGA78 MT40A4G4VA-068IT:B 0 Build or Request
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OR2T40A-4BC432I Lattice Semiconductor Corporation
1 Field Programmable Gate Array, 900 CLBs, 43200 Gates, 3600-Cell, CMOS, PBGA432 OR2T40A-4BC432I 0 Build or Request
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MT40A4G4DVN-062H:ETR Micron Technology Inc
1 DDR4 DRAM, 4GX4, CMOS, PBGA78 MT40A4G4DVN-062H:ETR 0 Build or Request
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MT40A4G4JC-062EIT:B Micron Technology Inc
1 DDR4 DRAM, 4GX4, CMOS, PBGA78 MT40A4G4JC-062EIT:B 0 Build or Request
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OR2T40A-4BC600 LSI Corporation
1 Field Programmable Gate Array, 900 CLBs, 43200 Gates, 900-Cell, CMOS, PBGA600 OR2T40A-4BC600 0 Build or Request
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WPRT40A-470RJB240 TT Electronics Welwyn Components
1 Res,Radial,Wirewound,470 Ohms,5% +/-Tol,-350,350ppm TC WPRT40A-470RJB240 0 Build or Request
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OR2T40A-4PS240 LSI Corporation
1 Field Programmable Gate Array, 900 CLBs, 43200 Gates, 3600-Cell, CMOS, PQFP240 OR2T40A-4PS240 0 Build or Request
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OR2T40A-4BA352I LSI Corporation
1 Field Programmable Gate Array, 900 CLBs, 43200 Gates, 10MHz, 3600-Cell, CMOS, PBGA352 OR2T40A-4BA352I 0 Build or Request
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MT40A4G4FSE-083E:A Micron Technology Inc
1 DDR4 DRAM, 4GX4, CMOS, PBGA78 MT40A4G4FSE-083E:A 0 Build or Request
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OR2T40A-4BC432I LSI Corporation
1 Field Programmable Gate Array, 900 CLBs, 43200 Gates, 500MHz, 3600-Cell, CMOS, PBGA432 OR2T40A-4BC432I 0 Build or Request
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WPRT40A-43RJB240 TT Electronics Resistors
1 Fixed Resistor, Wire Wound, 40W, 43ohm, 5% +/-Tol, 350ppm/Cel, Panel Mount, WPRT40A-43RJB240 0 Build or Request
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OR2T40A-4BC432 LSI Corporation
1 Field Programmable Gate Array, 900 CLBs, 43200 Gates, 500MHz, 3600-Cell, CMOS, PBGA432 OR2T40A-4BC432 0 Build or Request
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WPRT40A-47RJB240 TT Electronics Welwyn Components
1 Res,Radial,Wirewound,47 Ohms,5% +/-Tol,-350,350ppm TC WPRT40A-47RJB240 0 Build or Request
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OR2T40A-4PS240I LSI Corporation
1 Field Programmable Gate Array, 900 CLBs, 43200 Gates, 3600-Cell, CMOS, PQFP240 OR2T40A-4PS240I 0 Build or Request
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WPRT40A-430RJB240 TT Electronics Resistors
1 Fixed Resistor, Wire Wound, 40W, 430ohm, 5% +/-Tol, 350ppm/Cel, Panel Mount, WPRT40A-430RJB240 0 Build or Request
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MT40A4G4VA-068:B Micron Technology Inc
1 DDR4 DRAM, 4GX4, CMOS, PBGA78 MT40A4G4VA-068:B 0 Build or Request
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MT40A4G4VA-062E:BTR Micron Technology Inc
1 DDR4 DRAM, 4GX4, 19ns, CMOS, PBGA78 MT40A4G4VA-062E:BTR 0 Build or Request
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OR2T40A-4BA352 Lattice Semiconductor Corporation
1 Field Programmable Gate Array, 900 CLBs, 43200 Gates, 3600-Cell, CMOS, PBGA352 OR2T40A-4BA352 0 Build or Request
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OR2T40A-4PS240I-BT LSI Corporation
1 Field Programmable Gate Array, 900 CLBs, 43200 Gates, CMOS, PQFP240 OR2T40A-4PS240I-BT 0 Build or Request
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MT40A4G4VA-062EIT:B Micron Technology Inc
1 DDR4 DRAM, 4GX4, CMOS, PBGA78 MT40A4G4VA-062EIT:B 0 Build or Request
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OR2T40A-4PS240-DB LSI Corporation
1 Field Programmable Gate Array, 900 CLBs, 43200 Gates, CMOS, PQFP240 OR2T40A-4PS240-DB 0 Build or Request
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