TIP107G Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
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TIP107G onsemi
1 High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 mAdc; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; TO-220 AB Compact Package; Collector-Emitter Sustaining Voltage--@ 30 mAdc VCEO(sus) = 60 Vdc (Min)-TIP100, TIP105 VCEO(sus) = 80 Vdc (Min)-TIP101, TIP106 VCEO(sus) = 100 Vdc (Min)-TIP102, TIP107; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc VCE(sat)= 2.5 Vdc (Max) @ IC= 8.0 Adc; Pb-Free Packages are Available Transistor Outline, Vertical TIP107G 1 Download Model
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TIP107G-TQ2-R Unisonic Technologies Co Ltd
1 Power Bipolar Transistor TIP107G-TQ2-R 0 Build or Request
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TIP107G-T6S-K Unisonic Technologies Co Ltd
1 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin TIP107G-T6S-K 0 Build or Request
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TIP107G-TN3-T Unisonic Technologies Co Ltd
1 Power Bipolar Transistor TIP107G-TN3-T 0 Build or Request
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TIP107G-TF3-T Unisonic Technologies Co Ltd
1 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin TIP107G-TF3-T 0 Build or Request
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TIP107G-TQ2-T Unisonic Technologies Co Ltd
1 Power Bipolar Transistor TIP107G-TQ2-T 0 Build or Request
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TIP107G-T60-K Unisonic Technologies Co Ltd
1 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin TIP107G-T60-K 0 Build or Request
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TIP107G-TN3-R Unisonic Technologies Co Ltd
1 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin TIP107G-TN3-R 0 Build or Request
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TIP107G-TA3-T Unisonic Technologies Co Ltd
1 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin TIP107G-TA3-T 0 Build or Request
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