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TP65H050G4WS
Renesas Electronics
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1 | The TP65H050G4WS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge. The TP65H050G4WS is offered in an industry-standard 3-lead TO-247 with a common source package configuration. | Transistor Outline, Vertical | TP65H050G4WS |
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TP65H050G4WS
Transphorm
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1 | MOSFET GAN FET 650V 34A TO247 | Transistor Outline, Vertical | TP65H050G4WS |
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![Part Image](["https://componentsearchengine.com/2D/0T/20076992.2.1.png",null,null])
![Part Image](["https://www.mouser.com/images/transphorm/images/TO-247_DSL.jpg",null,null])
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