TP8N6 Model Download Search Results
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STP8N65M5
STMicroelectronics
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1 | These devices are N-channel MDmesh™ VPower MOSFETs based on an innovativeproprietary vertical process technology, which iscombined with STMicroelectronics’ well-knownPowerMESH™ horizontal layout structure. Theresulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especiallysuitable for applications which require superiorpower density and outstanding efficiency. | Transistor Outline, Vertical | STP8N65M5 |
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TP8N685K020C
Vishay Intertechnologies
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1 | Tantalum Capacitor, Polarized, Tantalum (dry/solid), 20V, 10% +Tol, 10% -Tol, 6.8uF, Surface Mount, 1411 | TP8N685K020C |
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TP8N685M020C
Vishay Intertechnologies
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1 | Tantalum Capacitor, Polarized, Tantalum (dry/solid), 20V, 20% +Tol, 20% -Tol, 6.8uF, Surface Mount, 1411 | TP8N685M020C |
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MTP8N60
New Jersey Semiconductor Products Inc
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1 | Power Field-Effect Transistor, 8A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | MTP8N60 |
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IXTP8N65X2M
IXYS Corporation
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1 | Power Field-Effect Transistor | IXTP8N65X2M |
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IXTP8N65X2
IXYS Corporation
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1 | Power Field-Effect Transistor | IXTP8N65X2 |
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IXTP8N65X2
LITTELFUSE
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1 | Power Field-Effect Transistor, 8A I(D), 650V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IXTP8N65X2 |
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IXTP8N65X2M
LITTELFUSE
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1 | Power Field-Effect Transistor, 8A I(D), 650V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IXTP8N65X2M |
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![Part Image](["https://media.rs-online.com/t_large/R7609727-01.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
![Part Image](["https://www.littelfuse.com/~/media/electronics/images/power_semiconductors/littelfuse_power_semi_to-220_3_h_2sq_3l_image.jpg.jpg",null,null])
![Part Image](["https://www.littelfuse.com/~/media/electronics/images/power_semiconductors/littelfuse_power_semi_to-220_overmolded_3_h_3l_image.jpg.jpg",null,null])
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