TPH52 Model Download Search Results
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TPH5200FNH,L1Q(M
Toshiba America Electronic Components
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1 | Power Field-Effect Transistor, 26A I(D), 250V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TPH5200FNH,L1Q(M |
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TPH5200FNH
Toshiba
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1 | N-ch MOSFET, 250 V, 0.052 Ω@10V, SOP Advance, U-MOSⅧ-H | TPH5200FNH |
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TPH5200FNH,L1Q
Toshiba America Electronic Components
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1 | Power Field-Effect Transistor, 26A I(D), 250V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TPH5200FNH,L1Q |
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![Part Image](["https://toshiba.semicon-storage.com/content/dam/toshiba-ss-v3/master/en/semiconductor/design-development/package-detail/Pkg_img/SOP_Advance.png",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/1588_8-PowerVDFN%20PKG.jpg"])
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