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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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TW015Z65C Toshiba
1 N-ch SiC MOSFET, 650 V, 0.015 Ω(typ.)@18V, TO-247-4L(X), 3rd Gen. Other TW015Z65C 1 Download Model
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TW015N65C Toshiba
1 N-ch SiC MOSFET, 650 V, 0.015 Ω(typ.)@18V, TO-247, 3rd Gen. Other TW015N65C 1 Download Model
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TW015Z120C Toshiba
1 N-ch SiC MOSFET, 1200 V, 0.015 Ω(typ.)@18 V, TO-247-4L(X), 3rd Gen. Other TW015Z120C 1 Download Model
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TW015N120C Toshiba
1 N-ch SiC MOSFET, 1200 V, 0.015 Ω(typ.)@18V, TO-247, 3rd Gen. Other TW015N120C 1 Download Model
Part Image Part Image 1 TOSHIBA - TW015Z120C,S1F(S - Silicon Carbide MOSFET, Single, N Channel, 100 A, 1.2 kV, 0.015 ohm, TO-247 Other TW015Z120C,S1F(S 1 Download Model
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KSTW015A0F41-SRZ OmniOn Power
1 Bus converter, 50W Sixteenth-brick, 36-75 Vin, 2.64-3.63 Vout, Open frame Other KSTW015A0F41-SRZ 1 Download Model
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ESTW015A0A41Z OmniOn Power
1 Bus converter, 75W Eighth-brick, 36-75 Vin, 4-5.5 Vout, Open frame Other ESTW015A0A41Z 1 Download Model
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ESTW015A0F41Z OmniOn Power
1 Bus converter, 50W Eighth-brick, 36-75 Vin, 2.64-3.63 Vout, Open frame Other ESTW015A0F41Z 1 Download Model
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TW015N120C Toshiba Electronic Devices & Storage Corporation
1 Power Field-Effect Transistor, 100A I(D), 1200V, 0.02ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 TW015N120C 0 Build or Request
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TW015N65C,S1F(S Toshiba America Electronic Components
1 Power Field-Effect Transistor, 100A I(D), 650V, 0.021ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 TW015N65C,S1F(S 0 Build or Request
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TW0152A Tai-Saw Technology Co Ltd
1 Oscillator TW0152A 0 Build or Request
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TW0151A Tai-Saw Technology Co Ltd
1 CMOS Output Clock Oscillator, 40MHz Nom TW0151A 0 Build or Request
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TW0155A Tai-Saw Technology Co Ltd
1 PECL Output Clock Oscillator, 212.5MHz Nom TW0155A 0 Build or Request
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TW015Z65C Toshiba Electronic Devices & Storage Corporation
0 N-ch SiC MOSFET, 650 V, 100 A, 0.022 Ω@18V, TO-247-4L(X) TW015Z65C 0 Build or Request
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TW0159A Tai-Saw Technology Co Ltd
1 Oscillator TW0159A 0 Build or Request
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TW015N120C,S1F(S Toshiba America Electronic Components
1 Power Field-Effect Transistor, 100A I(D), 1200V, 0.02ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 TW015N120C,S1F(S 0 Build or Request
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TW0154A Tai-Saw Technology Co Ltd
1 Oscillator TW0154A 0 Build or Request
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TW015Z120C Toshiba Electronic Devices & Storage Corporation
1 Power Field-Effect Transistor, 100A I(D), 1200V, 0.021ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 TW015Z120C 0 Build or Request
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TW0150A Tai-Saw Technology Co Ltd
1 Oscillator TW0150A 0 Build or Request
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TW0153A Tai-Saw Technology Co Ltd
1 Oscillator TW0153A 0 Build or Request
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TW015N65C Toshiba Electronic Devices & Storage Corporation
1 Power Field-Effect Transistor, 100A I(D), 650V, 0.021ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 TW015N65C 0 Build or Request
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TW0158A Tai-Saw Technology Co Ltd
1 Oscillator TW0158A 0 Build or Request
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T543D477K004ATW015WAFL KEMET Corporation
1 Tantalum Capacitor, Polarized, Tantalum(solid Polymer), 4V, 10% +Tol, 10% -Tol, 470uF, Surface Mount, 2917 T543D477K004ATW015WAFL 0 Build or Request
Part Image Part Image 1 Film Capacitor, R64TW0,15UF+/-1%630V 0 Build or Request
Part Image Part Image 1 Film Capacitor, Polyphenylene Sulfide, 63V, 1% +Tol, 1% -Tol, 0.15uF, Through Hole Mount PMA64TW0,15UF+/-1%63V 0 Build or Request
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