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TW092V65C
Toshiba
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1 | N-ch SiC MOSFET, 650 V, 0.092 Ω(typ.)@18 V, DFN 8×8, 3rd Gen. | Other | TW092V65C |
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TW092V65C,LQ
Toshiba America Electronic Components
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1 | Power Field-Effect Transistor, 27A I(D), 650V, 0.136ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | TW092V65C,LQ |
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![Part Image](["https://toshiba.semicon-storage.com/content/dam/toshiba-ss-v3/master/en/semiconductor/design-development/package-detail/Pkg_img/DFN8x8.png","https://toshiba.semicon-storage.com/content/dam/toshiba-ss-v3/master/en/semiconductor/design-development/package-detail/Pkg_img/DFN8x8.png",null])
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