UF3SC Model Download Search Results
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UF3SC065040B7S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Other | UF3SC065040B7S |
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UF3SC120016K4S
onsemi
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1 | Silicon Carbide (SiC) Cascode JFET - EliteSiC, 16 mohm, 1200V, TO-247-4L | Other | UF3SC120016K4S |
3
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UF3SC120009K4S
onsemi
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1 | N-Channel 1200 V 120A (Tc) 789W (Tc) Through Hole TO-247-4 | Other | UF3SC120009K4S |
3
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UF3SC065030B7S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Other | UF3SC065030B7S |
3
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UF3SC120016K3S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Transistor Outline, Vertical | UF3SC120016K3S |
3
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UF3SC120040B7S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Other | UF3SC120040B7S |
3
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UF3SC065007K4S
onsemi
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1 | N-Channel 650 V 120A (Tc) 789W (Tc) Through Hole TO-247-4 | Other | UF3SC065007K4S |
3
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UF3SC065030D8S
Qorvo
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1 | MOSFET 650V/30mOhm SiC STACKED FAST CASCODE G3 DFN8 REDUCED Rth ENGINEERING LIFECYCLE | Other | UF3SC065030D8S |
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UF3SC120016K4S
Qorvo
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1 | Power Field-Effect Transistor, 107A I(D), 1200V, 0.021ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247 | UF3SC120016K4S |
0
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UF3SC120016K3S
Qorvo
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1 | Power Field-Effect Transistor, 107A I(D), 1200V, 0.021ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247 | UF3SC120016K3S |
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UF3SC065007K4S
Qorvo
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1 | Power Field-Effect Transistor, 120A I(D), 650V, 0.009ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247 | UF3SC065007K4S |
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UF3SC065030B7S
Qorvo
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1 | Power Field-Effect Transistor, 62A I(D), 650V, 0.035ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET | UF3SC065030B7S |
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UF3SC120040B7S
Qorvo
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1 | Power Field-Effect Transistor, 47A I(D), 1200V, 0.045ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET | UF3SC120040B7S |
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UF3SC120009K4S
Qorvo
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1 | Power Field-Effect Transistor, 120A I(D), 1200V, 0.011ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247 | UF3SC120009K4S |
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UF3SC065040B7S
Qorvo
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1 | Power Field-Effect Transistor, 43A I(D), 650V, 0.052ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET | UF3SC065040B7S |
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UF3SC120016K4S
UnitedSiC
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1 | Power Field-Effect Transistor, 107A I(D), 1200V, 0.021ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247 | UF3SC120016K4S |
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UF3SC120016K3S
UnitedSiC
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1 | Power Field-Effect Transistor, 107A I(D), 1200V, 0.021ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247 | UF3SC120016K3S |
0
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UF3SC120016K3SSB
Qorvo
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1 | Typical on-resistance RDS(on),typ of 16mWw Maximum operating temperature of 175°Cw Excellent reverse recoveryw Low gate chargePart Number Markingw Very low switching losses (required RC-snubber loss negligible .under typical operating conditions) | UF3SC120016K3SSB |
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![Part Image](["https://componentsearchengine.com/Images/1/UF3SC065040B7S.jpg","https://componentsearchengine.com/Images/1/UF3SC065040B7S.jpg",null])
![Part Image](["https://componentsearchengine.com/2D/0/20331297.png",null,null])
![Part Image](["https://componentsearchengine.com/2D/0/20331295.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/UF3SC065030B7S.jpg","https://componentsearchengine.com/Images/1/UF3SC065030B7S.jpg",null])
![Part Image](["https://componentsearchengine.com/2D/0/20331296.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/UF3SC120040B7S.jpg","https://componentsearchengine.com/Images/1/UF3SC120040B7S.jpg",null])
![Part Image](["https://componentsearchengine.com/2D/0/20331292.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/UF3SC065030D8S.jpg",null,null])
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