UF4C1 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge Transistor Outline, Vertical UF4C120053K3S 1 Download Model
Part Image Part Image 1 On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge Transistor Outline, Vertical UF4C120070K3S 1 Download Model
Part Image Part Image 1 Low Gate Charge; Excellent Reverse Recover; On-resistance RDS(on); Maximum operating temperature: 175 ?C Other UF4C120070K4S 1 Download Model
Part Image Part Image 1 N-Channel 1200 V 34A (Tc) 263W (Tc) Through Hole TO-247-4 Other UF4C120053K4S 1 Download Model
Part Image Part Image 1 On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge Other UF4C120053B7S 1 Download Model
Part Image Part Image 1 Power Field-Effect Transistor, 34A I(D), 1200V, 0.067ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247 UF4C120053K3S 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 27.5A I(D), 1200V, 0.091ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 UF4C120070K4S 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 27.5A I(D), 1200V, 0.091ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247 UF4C120070K3S 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 34A I(D), 1200V, 0.067ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247 UF4C120053K4S 0 Build or Request
Part Image Part Image 1 On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge UF4C120070B7S 1 Download Model
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