UJ3D1 Model Download Search Results
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UJ3D1205TS
onsemi
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1 | Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested | Transistor Outline, Vertical | UJ3D1205TS |
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UJ3D1250K2
onsemi
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1 | Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested | Transistor Outline, Vertical | UJ3D1250K2 |
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UJ3D1210KSD
onsemi
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1 | Diode 1200 V 5A Through Hole TO-247-3Silicon Carbide (SiC) Diod EliteSiC,TO-247-3L, 10 A, 1200 V SiC MergedPiN-Schottky (MPS) Dual Diode | Transistor Outline, Vertical | UJ3D1210KSD |
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UJ3D1210TS
onsemi
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1 | Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested | Transistor Outline, Vertical | UJ3D1210TS |
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UJ3D1210KS
onsemi
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1 | Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested | Transistor Outline, Vertical | UJ3D1210KS |
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UJ3D1220K2
onsemi
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1 | Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested | Transistor Outline, Vertical | UJ3D1220K2 |
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UJ3D1220KSD
onsemi
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1 | 100% UIS tested; Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered | Transistor Outline, Vertical | UJ3D1220KSD |
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UJ3D1210K2
onsemi
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1 | Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested | Transistor Outline, Vertical | UJ3D1210K2 |
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UJ3D1202TS
onsemi
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1 | Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested | Transistor Outline, Vertical | UJ3D1202TS |
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UJ3D1725K2
onsemi
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1 | Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested; Operating temperature: 175?C (max); Easy paralleling | Transistor Outline, Vertical | UJ3D1725K2 |
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UJ3D1250K
onsemi
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1 | Operating temperature: 175?C (max); Easy paralleling; Extremely fast switching not dependent on temperature; No reverse or forward recovery; Enhanced surge current capability, MPS structure; Excellent thermal performance, Ag sintered; 100% UIS tested | Transistor Outline, Vertical | UJ3D1250K |
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UJ3D1250KSB
Qorvo
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1 | 50 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode | Transistor Outline, Vertical | UJ3D1250KSB |
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UJ3D1210TSSR
Qorvo
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1 | 10 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode | Transistor Outline, Vertical | UJ3D1210TSSR |
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UJ3D1210KSDSR
Qorvo
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1 | Maximum operating temperature of 175°Cw AEC-Q101 qualifiedw Easy parallelingw Extremely fast switching not dependent on temperaturew No reverse or forward recoveryw Enhanced surge current capability, MPS structurew Excellent thermal performance, Ag sintered | Transistor Outline, Vertical | UJ3D1210KSDSR |
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UJ3D1205TSSR
Qorvo
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1 | 5 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode | Transistor Outline, Vertical | UJ3D1205TSSR |
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UJ3D1250K2SB
Qorvo
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1 | 50 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode | Transistor Outline, Vertical | UJ3D1250K2SB |
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UJ3D1202TSSR
Qorvo
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1 | 2 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode | Transistor Outline, Vertical | UJ3D1202TSSR |
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UJ3D1220KSDSR
Qorvo
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1 | 20 A, 1200 V SiC Merged PiN-Schottky (MPS) Dual Diode | Transistor Outline, Vertical | UJ3D1220KSDSR |
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UJ3D1210TS
Qorvo
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-220AC | UJ3D1210TS |
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UJ3D1250K
Qorvo
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 50A, 1200V V(RRM), Silicon Carbide, TO-247 | UJ3D1250K |
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UJ3D1725K2
Qorvo
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 1700V V(RRM), Silicon Carbide, TO-247 | UJ3D1725K2 |
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UJ3D1210KS
Qorvo
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-247 | UJ3D1210KS |
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UJ3D1220KSD
Qorvo
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-247 | UJ3D1220KSD |
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UJ3D1210KSD
Qorvo
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 1200V V(RRM), Silicon Carbide, TO-247 | UJ3D1210KSD |
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UJ3D1205TS
Qorvo
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 1200V V(RRM), Silicon Carbide, TO-220AC | UJ3D1205TS |
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![Part Image](["https://componentsearchengine.com/2D/0/20331341.png",null,null])
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