UJ3N1 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	UJ3N120065K3S onsemi	1	Operating temperature: 175?C (max); Extremely fast switching not dependent on temperature; Low gate charge and intrinsic capacitance; RoHS compliant	Transistor Outline, Vertical	UJ3N120065K3S	3D model available Symbol and footprint available 3	1 Download Model
	UJ3N120070K3S onsemi	1	Operating temperature: 175?C (max); Extremely fast switching not dependent on temperature; Low gate charge and intrinsic capacitance; RoHS compliant	Transistor Outline, Vertical	UJ3N120070K3S	3D model available Symbol and footprint available 3	1 Download Model
	UJ3N120035K3S onsemi	1	Typical on-resistance RDS(on),typ of 35mWMaximum operating temperature of 175°C	Transistor Outline, Vertical	UJ3N120035K3S	3D model available Symbol and footprint available 3	1 Download Model
	UJ3N120070K3SSR Qorvo	1	1200 V, 70 mohm Normally-On SiC JFET	Transistor Outline, Vertical	UJ3N120070K3SSR	3D model available Symbol and footprint available 3	1 Download Model

	UJ3N120035K3SSB Qorvo	1	Voltage controlled w DC-AC invertersw w Switch mode power suppliesw w Power factor correction modulesw Low gate charge w Motor drivesw Low intrinsic capacitance w Induction heatingw RoHS compliantMaximum RatingsSymbol UnitsVDS VAAIDM APtot WTJ,max °CTJ, TSTG °CTL °C(1) +20V AC rating applies for turn-on pulses <200ns applied with external RG > 1W.(2) Limited by TJ,max(3) Pulse width tp limited by TJ,max429Max. lead temperature for soldering,1/8” from case for 5	Transistor Outline, Vertical	UJ3N120035K3SSB	3D model available Symbol and footprint available 3	1 Download Model
	UJ3N120065K3SSR Qorvo	1	Typical on-resistance RDS(on),typ of 66mWw Voltage controlledw Maximum operating temperature of 175°Cw Extremely fast switching not dependent on temperaturew Low gate chargew Low intrinsic capacitance	Transistor Outline, Vertical	UJ3N120065K3SSR	3D model available Symbol and footprint available 3	1 Download Model
	UJ3N120065K3S Qorvo	1	Power Field-Effect Transistor, 34A I(D), 1200V, 0.09ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247		UJ3N120065K3S	3D model not available Symbol and footprint not available 0	0 Build or Request
	UJ3N120070K3S Qorvo	1	Power Field-Effect Transistor, 33.5A I(D), 1200V, 0.09ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247		UJ3N120070K3S	3D model not available Symbol and footprint not available 0	0 Build or Request
	UJ3N120035K3S Qorvo	1	Power Field-Effect Transistor, 63A I(D), 1200V, 0.045ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247		UJ3N120035K3S	3D model not available Symbol and footprint not available 0	0 Build or Request
	UJ3N120070K3S UnitedSiC	1	Power Field-Effect Transistor, 33.5A I(D), 1200V, 0.09ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247		UJ3N120070K3S	3D model not available Symbol and footprint not available 0	0 Build or Request

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