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UPD48576218F1-E24-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576218F1-E24-DW1-A 1 Download Model
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UPD48576236F1-E18-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576236F1-E18-DW1-A 1 Download Model
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UPD48576236F1-E24-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576236F1-E24-DW1-A 1 Download Model
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UPD48576218F1-E18-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576218F1-E18-DW1-A 1 Download Model
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UPD48576209F1-E24-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576209F1-E24-DW1-A 1 Download Model
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UPD48288209FF-EF33-DW1 Renesas Electronics Corporation
1 DDR1 DRAM, 32MX9, CMOS, PBGA144 UPD48288209FF-EF33-DW1 0 Build or Request
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UPD48830LG6-A50 Renesas Electronics Corporation
1 Rambus DRAM, 1MX8, CMOS, PDSO72 UPD48830LG6-A50 0 Build or Request
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UPD488130LVN-A50-9 Renesas Electronics Corporation
1 Rambus DRAM, 2MX8, CMOS UPD488130LVN-A50-9 0 Build or Request
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UPD482444GW-70 Renesas Electronics Corporation
1 Video DRAM, 256KX16, CMOS, PDSO64 UPD482444GW-70 0 Build or Request
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UPD482234G5M-80L Renesas Electronics Corporation
1 Video DRAM, 256KX8, CMOS, PDSO40 UPD482234G5M-80L 0 Build or Request
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UPD485505G-25-E2-A NEC Electronics Group
1 FIFO, 5KX8, 18ns, Synchronous, CMOS, PDSO24 UPD485505G-25-E2-A 0 Build or Request
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UPD488130LVN-A50 Renesas Electronics Corporation
1 Rambus DRAM, 2MX8, CMOS UPD488130LVN-A50 0 Build or Request
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UPD488170LVN-A50-9 Renesas Electronics Corporation
1 Rambus DRAM, 2MX9, CMOS UPD488170LVN-A50-9 0 Build or Request
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UPD488170VN-A50-9 Renesas Electronics Corporation
1 Rambus DRAM, 2MX9, CMOS UPD488170VN-A50-9 0 Build or Request
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UPD482234G5-70 NEC Electronics America Inc
1 Video DRAM, 256KX8, 70ns, MOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 UPD482234G5-70 0 Build or Request
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UPD482234VF-80 Renesas Electronics Corporation
1 Memory Circuit, 256KX8, CMOS, PZIP40 UPD482234VF-80 0 Build or Request
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UPD48288236AFF-E18-DW1-A Renesas Electronics Corporation
1 DDR1 DRAM, 8MX36, CMOS, PBGA144 UPD48288236AFF-E18-DW1-A 0 Build or Request
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UPD48011436FF-FH15-FF1-A Renesas Electronics Corporation
1 DDR3 DRAM, 32MX36, CMOS, PBGA180 UPD48011436FF-FH15-FF1-A 0 Build or Request
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UPD48288118FF-E50-DW1 Renesas Electronics Corporation
1 DDR DRAM, 16MX18, 0.4ns, CMOS, PBGA144 UPD48288118FF-E50-DW1 0 Build or Request
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UPD48576236FF-E33-DW1 Renesas Electronics Corporation
1 DDR1 DRAM, 16MX36, 0.35ns, CMOS, PBGA144 UPD48576236FF-E33-DW1 0 Build or Request
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UPD48576209FF-E18Y-DW1-A Renesas Electronics Corporation
1 LLDRAM UPD48576209FF-E18Y-DW1-A 0 Build or Request
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UPD488170LG6-A50 NEC Electronics America Inc
1 Rambus DRAM, 2MX9, CMOS, PDSO36, PLASTIC, SSOP-72/36 UPD488170LG6-A50 0 Build or Request
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UPD48576236FF-E24Y-DW1 Renesas Electronics Corporation
1 LLDRAM UPD48576236FF-E24Y-DW1 0 Build or Request
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UPD485506G5-25-7JF Renesas Electronics Corporation
1 FIFO, 5KX16, 18ns, Synchronous, CMOS, PDSO44 UPD485506G5-25-7JF 0 Build or Request
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UPD48576236FF-E33-DW1-A Renesas Electronics Corporation
1 DDR1 DRAM, 16MX36, 0.35ns, CMOS, PBGA144 UPD48576236FF-E33-DW1-A 0 Build or Request
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