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dim900m1hs12-pg500
Dynex
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1 | 1200 V Field Stop Trench IGBT Module,0.5 µA -40 to 125 Degree C,151.8 x 62 mm | Other | dim900m1hs12-pg500 |
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DIM900ESM45-F000
Dynex Semiconductor
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1 | Insulated Gate Bipolar Transistor, 900A I(C), 4500V V(BR)CES, N-Channel | DIM900ESM45-F000 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/2515_module_9.jpg"])
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