This product video is brought to you by Mouser Electronics. Infineon Technologies’ OptiMOS™ 6 150V Power MOSFETs are a next-generation family of N-channel MOSFETs designed for high-performance power conversion in demanding applications such as telecom, server power supplies, battery-powered tools, and industrial drives. One of the key technical advantages of this series is its significantly reduced on-state resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency. This feature is particularly important for high-current applications where energy loss must be minimized to reduce heat and improve system performance.
Another standout feature of the OptiMOS™ 6 150V family is its optimized Figure of Merit (FOM), combining low RDS(on) with low gate charge (Qg) and output capacitance (Coss). These improvements contribute to better switching behavior, reduced power dissipation, and faster response times—ideal for high-frequency DC-DC converters and synchronous rectification circuits. This balance between conduction and switching performance enables designers to meet increasingly strict energy efficiency standards while maintaining compact system designs.
Thermal management is another strength of this series. The OptiMOS™ 6 150V devices are built using Infineon’s advanced process technology, which provides excellent thermal resistance and heat dissipation, enabling higher power densities and compact system layouts without compromising reliability. These features are complemented by a variety of packages, including PQFN and SuperSO8, that support low-inductance layouts and efficient thermal transfer, which are critical in applications with constrained board space and high current demand.
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