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Product Video from onsemi

Onsemi NVBG022N120M3S Silicon Carbide (SiC) MOSFETs

Video Description

This product video is brought to you by Mouser Electronics, an authorized distributor of Onsemi.

The On Semiconductor NVBG022N120M3S Silicon Carbide (SiC) MOSFETs represent a cutting-edge advancement in power semiconductor technology, offering exceptional performance, efficiency, and reliability for a wide range of high-power and high-frequency applications. Designed to address the demanding requirements of modern power conversion systems, these MOSFETs leverage the unique properties of silicon carbide to deliver superior performance compared to traditional silicon-based devices.

Featuring a state-of-the-art silicon carbide (SiC) semiconductor material, the NVBG022N120M3S MOSFETs exhibit significantly lower on-state resistance (RDS(on)) and higher breakdown voltage compared to silicon MOSFETs and IGBTs. This results in reduced conduction losses, higher switching frequencies, and improved efficiency, making them ideal for high-power applications such as motor drives, renewable energy inverters, and automotive powertrains.

The NVBG022N120M3S MOSFETs are characterized by their robust construction, high-temperature operation, and excellent thermal performance, enabling reliable operation in harsh environmental conditions and demanding industrial applications. With their low switching losses and fast switching speeds, these MOSFETs facilitate efficient power conversion and enable compact and lightweight designs. In addition, the NVBG022N120M3S MOSFETs feature advanced gate driver technologies and protection features, ensuring safe and reliable operation under various operating conditions. This includes overcurrent protection, overvoltage protection, and overtemperature protection, enhancing system reliability and protecting against device damage.

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Manufacturer: onsemi

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