This product video is brought to you by Mouser Electronics, an authorized distributor of Toshiba Electronic Devices & Storage Corporation.
Toshiba's 3rd Generation Silicon Carbide MOSFETs are designed to address the needs of high-power industrial applications such as 400 volt AC input AC to DC power supplies, photovoltaic inverters, and bi-directional DC to DC converters for UPSs. These MOSFETs offer a range of benefits, including lower power consumption and higher power density, which are critical for these types of applications.
These MOSFETs use advanced device structures with built-in Schottky barrier diodes, which ensure consistent RON and low forward voltage. This allows for significantly lower conduction and switching losses than 2nd generation devices, which translates to higher efficiency and lower heat generation.
Toshiba’s 3rd generation SiC MOSFETs are offered with a range of VDS and drain current ratings, including 1200 volt or 650 volt VDS and drain current ratings up to 100 amps. They are available in a TO-247 package, which is commonly used in high-power applications. Additionally, the wide VGS range and high gate threshold voltage of the MOSFETs simplify drive circuit design and prevent accidental turn-on due to switching noise, which helps to improve overall reliability.
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