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2N2906A - Microsemi Corporation

Description: Trans GP BJT PNP 60V 0.6A 500mW 3-Pin TO-18

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2N2906A - Microsemi Corporation - PCB symbol
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2N2906A - Microsemi Corporation PCB footprint - Other - Other - 2N2906A-2
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2N2906A Details

  • Manufacturer Part Number:

    2N2906A

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    BCY

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    50

  • JEDEC-95 Code:

    TO-206AA

  • JESD-30 Code:

    O-MBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    1.8 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • Turn-off Time-Max (toff):

    300 ns

  • Turn-on Time-Max (ton):

    45 ns

2N2906A Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N2906A is -55°C to 150°C, although the datasheet only specifies the electrical characteristics up to 125°C.
  • To ensure the 2N2906A is properly biased for linear operation, make sure to operate it within the recommended collector-emitter voltage (Vce) and collector current (Ic) ranges, and provide a stable base-emitter voltage (Vbe) using a voltage divider or other biasing network.
  • The maximum power dissipation of the 2N2906A is 625 mW, which is calculated based on the maximum collector-emitter voltage and collector current ratings.
  • Yes, the 2N2906A can be used as a switch, but it's not ideal for high-frequency switching applications due to its relatively slow switching times (tf ≈ 10 ns, tr ≈ 20 ns). It's better suited for low-frequency switching or linear amplification applications.
  • To protect the 2N2906A from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package or bag. Additionally, use ESD protection devices such as TVS diodes or ESD protection arrays in the circuit design.

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2N2906A Alternates

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Image Part Number Model
Part Image 2N2906A New Jersey Semiconductor Products Inc

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18
Part Image JANTX2N2906A Microsemi Corporation (now Microchip)

Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, Metal, 3 Pin
Part Image JANTX2N2906A Silicon Transistor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18
Part Image JANTXV2N2906AL New England Semiconductor

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Part Image JANS2N2906A Silicon Transistor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA
For a full list of alternate parts for 2N2906A, check out Findchips.com