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2N5460 - onsemi

Description: Transistor

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2N5460 - onsemi PCB footprint - Other - Other - TO127P254X732-3
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2N5460 - onsemi  - 3D model - Other - TO127P254X732-3
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2N5460 Details

  • Manufacturer Part Number:

    2N5460

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Package Description:

    CASE 29-11, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    29-11

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    2 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.31 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N5460 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N5460 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.
  • To ensure the 2N5460 is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is around 0.7V, and the collector-emitter voltage (Vce) is at least 1V. Additionally, the base current should be limited to prevent saturation, and the collector current should be within the recommended range.
  • The recommended storage temperature for the 2N5460 is -55°C to 150°C, as specified in the datasheet. It's essential to store the device within this temperature range to prevent damage and ensure reliable operation.
  • Yes, the 2N5460 can be used as a switch, but it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and the collector-emitter saturation voltage. Additionally, you should ensure that the device is properly biased and that the base current is sufficient to drive the load.
  • To handle ESD protection for the 2N5460, you should follow proper handling and storage procedures, such as using anti-static bags or wrist straps, and ensuring that the device is properly grounded during assembly and testing. Additionally, you can use ESD protection devices, such as TVS diodes, to protect the device from electrostatic discharge.

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2N5460 Overview

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2N5460 Alternates

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Image Part Number Model
Part Image 2N5460G Rochester Electronics LLC

P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, LEAD FREE, CASE 29-11, 3 PIN

Part Image 2N5460 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92

Part Image 2N5460-AMMO NXP Semiconductors

Small Signal Field-Effect Transistor, 40V, 1-Element, P-Channel, Silicon, Junction FET, TO-92

Part Image 2N5460/D74Z Texas Instruments

P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92

Part Image 2N5460TRELEADFREE Central Semiconductor Corp

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92,

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