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2N5551 - onsemi

Description: Bipolar Transistors - BJT 600mA 180V NPN

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Symbol
2N5551 - onsemi - PCB symbol
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PCB Footprints
2N5551 - onsemi PCB footprint - Other - Other - TO−92 (TO−226)
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3D Models
2N5551 - onsemi - 3D model - Other - TO−92 (TO−226)
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2N5551 Details

  • Manufacturer Part Number:

    2N5551

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    CASE 29-11, TO-226AA, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    160 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

2N5551 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N5551 is -65°C to 200°C.
  • Yes, the 2N5551 can be used as a switch, but it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (Vce(sat)). A more suitable transistor for switching applications would be the 2N2222 or 2N3904.
  • To choose the correct resistor values for the base circuit, you need to consider the input impedance, current gain, and voltage drop. A good starting point is to use the following formula: Rb = (Vcc - Vbe) / (Ic / hFE), where Rb is the base resistor, Vcc is the supply voltage, Vbe is the base-emitter voltage, Ic is the collector current, and hFE is the current gain.
  • The maximum collector current rating for the 2N5551 is 500 mA.
  • The 2N5551 is not suitable for high-frequency applications due to its relatively low transition frequency (fT) of 100 MHz. For high-frequency applications, consider using a transistor with a higher fT, such as the 2N3904 or 2N2222.

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2N5551 Overview

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2N5551 Alternates

Showing results

Image Part Number Model
Part Image 2N5551RLRPG onsemi

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Part Image 2N5551 Crimson Semiconductor Inc

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Part Image 2N5551D74Z Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Part Image 2N5551_J05Z Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3
Part Image 2N5551 Surge Components Inc

Small Signal Bipolar Transistor, 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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