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2N5555 - onsemi

Description: JFET Switching N±Channel Ð Depletion

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2N5555 - onsemi  - 3D model
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2N5555 Details

  • Manufacturer Part Number:

    2N5555

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Pin Count:

    3

  • Manufacturer Package Code:

    29-11

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain-source On Resistance-Max:

    150 Ω

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    1.2 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.31 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N5555 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N5555 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device to a maximum power dissipation of 1.5W at 25°C, and to ensure that the collector-emitter voltage and collector current are within the recommended operating ranges.
  • To ensure reliable operation of the 2N5555 in high-temperature environments, it's essential to consider the device's thermal characteristics, such as the maximum junction temperature (Tj) and thermal resistance (Rthja). Ensure that the device is properly heat-sinked, and that the ambient temperature is within the recommended operating range. Additionally, consider derating the device's power dissipation and current handling capabilities at higher temperatures.
  • The recommended storage temperature range for the 2N5555 is -55°C to 150°C. Storing the device outside of this range may affect its reliability and performance.
  • While the 2N5555 can be used as a switch, it's not ideal for high-frequency applications due to its relatively slow switching times (tf and tr) and high capacitance. For high-frequency applications, consider using a faster-switching transistor or a dedicated high-frequency switch.
  • To prevent EOS and ESD damage to the 2N5555, follow proper handling and assembly procedures, such as using anti-static wrist straps, mats, and packaging materials. Ensure that the device is properly soldered and connected to a circuit with adequate protection against voltage transients and surges.

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2N5555 Overview

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2N5555 Alternates

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Image Part Number Model
Part Image 2N5555 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92

Part Image 2N5555 Central Semiconductor Corp

Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-92

Part Image 2N5555 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92

Part Image 2N5555 National Semiconductor Corporation

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92

Part Image 2N5555 Texas Instruments

N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92

For a full list of alternate parts for 2N5555, check out Findchips.com