Part Image

2N7002K_R1_00001 - PANJIT

Description: MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected

Download 2N7002K_R1_00001 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
2N7002K_R1_00001 - PANJIT  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

2N7002K_R1_00001 Details

  • Manufacturer Part Number:

    2N7002K_R1_00001

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Taiwan

  • ECCN Code:

    EAR99

  • Manufacturer:

    PanJit Semiconductor

  • YTEOL:

    6.5

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.3 A

  • Drain-source On Resistance-Max:

    3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.35 W

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7002K_R1_00001 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N7002K_R1_00001 is -55°C to 150°C.
  • Yes, the 2N7002K_R1_00001 is suitable for high-frequency applications up to 4 GHz due to its low capacitance and high switching speed.
  • The maximum current rating for the 2N7002K_R1_00001 is 500 mA.
  • The 2N7002K_R1_00001 is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The typical turn-on and turn-off time for the 2N7002K_R1_00001 is around 10-20 ns.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

2N7002K_R1_00001 Overview

Use the download button to access the 2N7002K_R1_00001 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like 2N700, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to 2N7002K_R1_00001

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

2N7002K_R1_00001 Alternates

Showing results

Image Part Number Model
Part Image 2N7002K-H Formosa Microsemi Co Ltd

Small Signal Field-Effect Transistor, 0.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image 2N7002KT/R7 PanJit Semiconductor

Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2N7002P NXP Semiconductors

Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image 2N7002K HY Electronic Corp

Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2N7002K,215 NXP Semiconductors

Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

For a full list of alternate parts for 2N7002K_R1_00001, check out Findchips.com