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AFT09MP055NR1 - NXP

Description: RF MOSFET Transistors MV9 55W 12.5V TO270WB4

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AFT09MP055NR1 Details

  • Manufacturer Part Number:

    AFT09MP055NR1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.9 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDFP-F4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLATPACK

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    625 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

AFT09MP055NR1 Frequently Asked Questions (FAQs)

  • NXP provides a recommended PCB layout and thermal management guide in their application note AN11542. It's essential to follow these guidelines to ensure optimal performance, thermal dissipation, and reliability.
  • The selection of input and output capacitors depends on the specific application requirements. NXP recommends using X7R or X5R dielectric capacitors with a voltage rating of at least 2x the maximum input voltage. The capacitance value should be chosen based on the desired output ripple and transient response.
  • The maximum allowed voltage drop across the internal resistance (Rds(on)) of AFT09MP055NR1 is typically around 1.5V to 2V. Exceeding this limit may lead to overheating, reduced performance, or even device failure.
  • While AFT09MP055NR1 is designed for high-frequency switching, it's essential to consider the device's switching losses, thermal management, and PCB layout to ensure reliable operation. NXP recommends using their Switching Loss Calculator tool to estimate the device's performance in high-frequency applications.
  • NXP recommends using external overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to AFT09MP055NR1. The OVP circuit should be designed to trigger at a voltage slightly above the maximum rated voltage, while the OCP circuit should be set to a current limit slightly below the maximum rated current.

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AFT09MP055NR1 Overview

Use the download button to access the AFT09MP055NR1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like AFT09, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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