AFT09 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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A-FT09 ASSMANN WSW components GmbH
1 Connector Accessory, Hood, Polypropylene A-FT09 0 Build or Request
Part Image Part Image 1 RF MOSFET Transistors 136-941 MHz 16W 12.5V Other AFT09MS015NT1 1 Download Model
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AFT09S200W02GNR3 Freescale Semiconductor
1 RF Power Field-Effect Transistor AFT09S200W02GNR3 0 Build or Request
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AFT09MS031NR1 Freescale Semiconductor
1 RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET AFT09MS031NR1 0 Build or Request
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AFT09MS007NT1 Freescale Semiconductor
1 RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET AFT09MS007NT1 0 Build or Request
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AFT09H310-03SR6 NXP Semiconductors
1 RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET AFT09H310-03SR6 0 Build or Request
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AFT09S200W02SR3 Freescale Semiconductor
1 RF Power Field-Effect Transistor AFT09S200W02SR3 0 Build or Request
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AFT09MS031GNR1 Freescale Semiconductor
1 RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET AFT09MS031GNR1 0 Build or Request
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AFT09MP055GNR1 Freescale Semiconductor
1 RF Power Field-Effect Transistor AFT09MP055GNR1 0 Build or Request
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AFT09H310-03SR6 Freescale Semiconductor
1 RF Power Field-Effect Transistor AFT09H310-03SR6 0 Build or Request
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AFT09MS015NT1 Freescale Semiconductor
1 RF Power Field-Effect Transistor AFT09MS015NT1 0 Build or Request
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AFT09H310-04GSR6 NXP Semiconductors
1 RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET AFT09H310-04GSR6 0 Build or Request
Part Image Part Image 1 Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V AFT09MS007N 1 Download Model
Part Image Part Image 1 Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V AFT09MS031GNR1 1 Download Model
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AFT09S200W02NR3 NXP Semiconductors
1 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET AFT09S200W02NR3 0 Build or Request
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AFT09S200W02GNR3 NXP Semiconductors
1 RF Power Field-Effect Transistor AFT09S200W02GNR3 0 Build or Request
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AFT09S220-02NR3 NXP Semiconductors
1 RF Power Field-Effect Transistor AFT09S220-02NR3 0 Build or Request
Part Image Part Image 1 RF MOSFET Transistors LANDMOBILE 7W PLD1.5W AFT09MS007NT1 1 Download Model
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77311-SAFT09LF Amphenol Communications Solutions
1 Board Connector, 9 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Locking, Black Insulator 77311-SAFT09LF 0 Build or Request
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77311-SAFT09 Amphenol FCi
1 Board Connector, 9 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Locking, Black Insulator, Receptacle 77311-SAFT09 0 Build or Request
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77311-SAFT09 Amphenol Communications Solutions
1 Board Connector, 9 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Locking, Black Insulator, Receptacle 77311-SAFT09 0 Build or Request
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AFT09H310-04GSR6 Freescale Semiconductor
1 RF Power Field-Effect Transistor AFT09H310-04GSR6 0 Build or Request
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AFT09S200W02SR3 NXP Semiconductors
1 RF Power Field-Effect Transistor AFT09S200W02SR3 0 Build or Request
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AFT09S200W02NR3 Freescale Semiconductor
1 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET AFT09S200W02NR3 0 Build or Request
Part Image Part Image 1 N-channel LDMOS RF power transistor for 764–941 MHz, delivering up to 44 W CW output, 18 dB gain, 74% efficiency, and 31 W P1dB, with a 13.6 V supply, 500 mA bias, and 0.63 °C/W thermal resistance, housed in a TO-270-2 plastic package, ESD-protected to HBM 2kV, and rated up to 225 °C junction temperature, ideal for mobile radio and trunking base stations. AFT09MS031GN 1 Download Model
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