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AFT09MS031GNR1 - NXP

Description: Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V

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AFT09MS031GNR1 Details

  • Manufacturer Part Number:

    AFT09MS031GNR1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    40 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.1 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDFP-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLATPACK

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    317 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

AFT09MS031GNR1 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the package, using a solid ground plane, and minimizing thermal resistance by using a large copper area for heat dissipation.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and implement a robust cooling system to keep the junction temperature within the specified range.
  • Critical considerations for EMI and RFI shielding include using a metal shield or a Faraday cage, ensuring good grounding, and minimizing signal loop areas to reduce electromagnetic radiation.
  • To optimize the device for low-power consumption, use the lowest possible voltage supply, minimize switching frequencies, and use power-saving modes when possible. Additionally, optimize the PCB design to reduce power losses and use low-power external components.
  • Recommended testing and validation procedures include functional testing, parametric testing, and environmental testing (e.g., temperature, humidity, and vibration) to ensure the device meets the specified performance and reliability requirements.

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AFT09MS031GNR1 Overview

Use the download button to access the AFT09MS031GNR1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like AFT09, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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