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AFT09MS007NT1 - NXP

Description: RF MOSFET Transistors LANDMOBILE 7W PLD1.5W

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AFT09MS007NT1 - NXP  - 3D model
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AFT09MS007NT1 Details

  • Manufacturer Part Number:

    AFT09MS007NT1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    30 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.7 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    182 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

AFT09MS007NT1 Frequently Asked Questions (FAQs)

  • A good PCB layout for the AFT09MS007NT1 should include a solid ground plane, wide power traces, and a thermal relief pattern to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermal interface material (TIM) with a high thermal conductivity, and follow the recommended derating guidelines for the device.
  • The recommended soldering conditions for the AFT09MS007NT1 are: peak temperature 260°C, time above 217°C 30s, and time above 183°C 120s. Use a solder with a melting point above 217°C.
  • To protect the AFT09MS007NT1 from ESD, handle the device in an ESD-protected environment, use ESD-protective packaging, and follow proper grounding procedures during assembly and testing.
  • Store the AFT09MS007NT1 in its original packaging, away from direct sunlight, moisture, and extreme temperatures. Handle the device by the body, not the leads, and avoid bending or flexing the leads.

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AFT09MS007NT1 Overview

Use the download button to access the AFT09MS007NT1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like AFT09, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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