Description:The AT25XE041B is a member of our System Enhancing class of code and data storage solutions. It is designed for all system memory tasks ranging from boot/code shadowing to data logging and includes the 256-byte page Erase feature that enables efficient, lower energy datalogging.
The AT25XE041B-SSHN-T has a minimum of 100,000 write cycles per sector, and a minimum of 1,000,000 write cycles for the entire device.
When the page write buffer is full, the device will automatically write the buffer to the flash memory. However, if the buffer is not fully written before a new page write command is issued, the device will discard the remaining data in the buffer. To avoid this, ensure that the buffer is fully written before issuing a new page write command.
The WP# (Write Protect) pin is an active low input that allows the user to protect the entire device or a specific sector from write operations. When the WP# pin is low, the device or sector is write-protected.
To perform a sector erase, send the Sector Erase command (0x20) followed by the sector address. The device will then erase the entire sector.
The Deep Power-Down mode (DPD) is a lower power consumption mode than the Power-Down mode (PD). In DPD, the device is in a lower power state, the device is in a standby mode, and all internal clocks are stopped. In PD, the device is in a standby mode, but the internal clocks are still active.
Trust Checks
This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored
AT25XE041B-SSHN-T Overview
Use the download button to access the AT25XE041B-SSHN-T schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like AT25X,
or try a keyword search, such as Flash Memories
