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AT45DB641E-MWHN2B-T - Renesas Electronics

Description: The AT45DB641E DataFlash is a member of our System Enhancing class of code and data storage solutions designed with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. It also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.

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AT45DB641E-MWHN2B-T - Renesas Electronics PCB footprint - Small Outline No-lead - Small Outline No-lead - 8MW1 - 8-pad VDFN--00
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AT45DB641E-MWHN2B-T Details

  • Manufacturer Part Number:

    AT45DB641E-MWHN2B-T

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN

  • Package Description:

    VDFN-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    5.6

  • Clock Frequency-Max (fCLK):

    85 MHz

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Length:

    8 mm

  • Memory Density:

    67108864 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    1

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    67108864 words

  • Number of Words Code:

    64000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    64MX1

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC8,.32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    1.8 V

  • Seated Height-Max:

    1 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    2.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Type:

    NOR TYPE

  • Width:

    6 mm

AT45DB641E-MWHN2B-T Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the AT45DB641E-MWHN2B-T is 2.7V to 3.6V, with a typical voltage of 3.3V.
  • Page write and erase operations in the AT45DB641E-MWHN2B-T require specific command sequences and timing. Refer to the datasheet section on 'Command Sequences' and 'Timing Diagrams' for detailed information.
  • The AT45DB641E-MWHN2B-T supports up to 100,000 erase cycles per sector, with a total of 8192 sectors available.
  • Data retention and endurance in the AT45DB641E-MWHN2B-T can be ensured by following proper write and erase procedures, using error correction mechanisms, and implementing wear leveling and bad block management techniques.
  • The AT45DB641E-MWHN2B-T operates within a temperature range of -40°C to +85°C, with a maximum junction temperature of 150°C. Ensure proper thermal design and heat dissipation to prevent overheating.

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AT45DB641E-MWHN2B-T Overview

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