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ATF-33143-TR1G - Avago Technologies

Description: Trans JFET N-CH 5.5V 305mA pHEMT 4-Pin(3+Tab) SOT-343 T/R

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PCB Footprints
ATF-33143-TR1G - Avago Technologies PCB footprint - Other - Other - SOT-343_2024
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ATF-33143-TR1G - Avago Technologies  - 3D model - Other - SOT-343_2024
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ATF-33143-TR1G Details

  • Manufacturer Part Number:

    ATF-33143-TR1G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-70

  • Package Description:

    SMALL OUTLINE, R-PDSO-G4

  • Pin Count:

    4

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Manufacturer:

    Avago Technologies

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    5.5 V

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Highest Frequency Band:

    X BAND

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    160 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    0.6 W

  • Power Gain-Min (Gp):

    13.5 dB

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    GALLIUM ARSENIDE

ATF-33143-TR1G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the signal traces short and away from the power plane to minimize noise and crosstalk.
  • Use a heat sink or thermal pad to dissipate heat, and ensure good airflow around the device. Also, consider using a thermal interface material to improve heat transfer.
  • Power up the device in the following sequence: VCC, then AVCC, then DVCC. Ensure that the power supplies are stable and within the recommended voltage range before applying signals to the device.
  • Use a logic analyzer or oscilloscope to monitor the device's signals and verify that they are within the recommended specifications. Check the power supply voltages and ensure that they are stable and within the recommended range.
  • Yes, ATF-33143-TR1G is designed to meet the requirements of various industry standards, including AEC-Q100 for automotive applications. However, it is essential to verify that the device meets the specific requirements of your application.

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ATF-33143-TR1G Overview

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Part Image ATF-33143-TR1 Hewlett Packard Co

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

Part Image ATF-33143-TR1 Broadcom Limited

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET

Part Image ATF-33143-BLK Broadcom Limited

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET

Part Image ATF-33143-TR2G Avago Technologies

X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET, LEAD FREE, PLASTIC, SC-70, 4 PIN

Part Image ATF-33143-BLKG Broadcom Limited

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

For a full list of alternate parts for ATF-33143-TR1G, check out Findchips.com