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ATF-54143-TR1 - Avago Technologies

Description: RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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ATF-54143-TR1 - Avago Technologies PCB footprint - Other - Other - SOT-343_2023
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ATF-54143-TR1 - Avago Technologies  - 3D model - Other - SOT-343_2023
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ATF-54143-TR1 Details

  • Manufacturer Part Number:

    ATF-54143-TR1

  • Pbfree Code:

    No

  • Rohs Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-70

  • Package Description:

    SMALL OUTLINE, R-PDSO-G4

  • Pin Count:

    4

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Manufacturer:

    Avago Technologies

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    5 V

  • Drain Current-Max (ID):

    0.12 A

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Highest Frequency Band:

    C BAND

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    0.725 W

  • Power Gain-Min (Gp):

    15 dB

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    GALLIUM ARSENIDE

ATF-54143-TR1 Frequently Asked Questions (FAQs)

  • Broadcom recommends a 4-layer PCB with a solid ground plane, and thermal vias under the device to dissipate heat. A thermal pad on the bottom of the device should be connected to a thermal plane on the PCB.
  • To minimize power consumption, use the lowest possible supply voltage, reduce the clock frequency, and enable the power-down mode when not in use. Additionally, optimize the PCB design to minimize parasitic capacitance and inductance.
  • Handle the device with anti-static wrist straps, mats, or bags to prevent ESD damage. The ATF-54143-TR1 has built-in ESD protection, but it's not a substitute for proper handling and storage procedures.
  • The ATF-54143-TR1 is not designed for radiation-intensive environments. If your application requires radiation hardening, consider using a different device or consulting with Broadcom for custom solutions.
  • Use a logic analyzer or oscilloscope to capture signal waveforms and debug the issue. Consult the datasheet, application notes, and Broadcom's technical support resources for guidance. Isolate the issue to the device, PCB, or external components.

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ATF-54143-TR1 Overview

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ATF-54143-TR1 Alternates

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Image Part Number Model
Part Image ATF-54143-BLKG Agilent Technologies Inc

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

Part Image ATF-54143-TR1G Broadcom Limited

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

Part Image ATF-54143-BLK Broadcom Limited

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

Part Image ATF-54143-TR2 Agilent Technologies Inc

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

Part Image ATF-54143-BLKG Broadcom Limited

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

For a full list of alternate parts for ATF-54143-TR1, check out Findchips.com