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ATF-54143-TR1G - Avago Technologies

Description: BROADCOM LIMITED - ATF-54143-TR1G - MOSFET, RF, HEMT, SOT-343

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ATF-54143-TR1G - Avago Technologies PCB footprint - Other - Other - ATF-54143-TR1G-1
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ATF-54143-TR1G - Avago Technologies  - 3D model - Other - ATF-54143-TR1G-1
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ATF-54143-TR1G Details

  • Manufacturer Part Number:

    ATF-54143-TR1G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-70

  • Package Description:

    SMALL OUTLINE, R-PDSO-G4

  • Pin Count:

    4

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Manufacturer:

    Avago Technologies

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    5 V

  • Drain Current-Max (ID):

    0.12 A

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Highest Frequency Band:

    C BAND

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    0.725 W

  • Power Gain-Min (Gp):

    15 dB

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    GALLIUM ARSENIDE

ATF-54143-TR1G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the signal traces short and away from the power plane to minimize noise and crosstalk.
  • Use a heat sink with a thermal resistance of less than 10°C/W to keep the junction temperature below 125°C. Ensure good airflow and avoid blocking the airflow around the device.
  • Power up the device in the following sequence: VCC, then AVCC, then DVCC. Ensure that VCC is stable before applying AVCC and DVCC.
  • Use a logic analyzer or oscilloscope to capture waveforms and verify signal integrity. Check the power supply voltage, clock signal, and data signals for any anomalies or noise.
  • No, ATF-54143-TR1G is not designed for radiation-hardened applications. It is intended for commercial use only.

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ATF-54143-TR1G Overview

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Part Image ATF-54143-BLKG Agilent Technologies Inc

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Part Image ATF-54143-TR1G Broadcom Limited

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Part Image ATF-54143-BLK Broadcom Limited

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Part Image ATF-54143-TR2 Agilent Technologies Inc

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Part Image ATF-54143-BLKG Broadcom Limited

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

For a full list of alternate parts for ATF-54143-TR1G, check out Findchips.com