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AUIRF3805 - Infineon

Description: Infineon AUIRF3805 N-channel MOSFET, 210 A, 55 V HEXFET, 3-Pin TO-220AB

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PCB Footprints
AUIRF3805 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB
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3D Models
AUIRF3805 - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB
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AUIRF3805 Details

  • Manufacturer Part Number:

    AUIRF3805

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, PLASTIC PACKAGE-3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    940 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    160 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    890 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRF3805 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the AUIRF3805 is 175°C. It's essential to ensure that the device operates within the recommended temperature range to prevent overheating and ensure reliable operation.
  • Proper cooling is crucial for the AUIRF3805. Ensure good thermal conductivity between the device and the heat sink. Use a heat sink with a thermal resistance of less than 1°C/W, and apply a thin layer of thermal interface material. Additionally, ensure good airflow around the heat sink.
  • For optimal performance, follow these PCB layout guidelines: keep the power stage components close to the AUIRF3805, use a solid ground plane, and minimize the length of the high-current paths. Also, ensure that the PCB is designed to handle high currents and has adequate thermal dissipation.
  • To protect the AUIRF3805 from overvoltage and overcurrent, use a voltage regulator with overvoltage protection (OVP) and overcurrent protection (OCP). Additionally, consider adding a fuse or a current-limiting resistor in series with the device to prevent damage from excessive current.
  • The recommended gate drive voltage for the AUIRF3805 is between 10V and 15V. This ensures proper switching and minimizes power losses. However, the exact gate drive voltage may vary depending on the specific application and requirements.

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AUIRF3805 Overview

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AUIRF3805 Alternates

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Image Part Number Model
Part Image IRF3805PBF Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image AUIRF3805 International Rectifier

Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF3805PBF International Rectifier

Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF3805 International Rectifier

Power Field-Effect Transistor, 220A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF3805 Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for AUIRF3805, check out Findchips.com