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AUIRF5210STRL - Infineon

Description: INFINEON - AUIRF5210STRL - MOSFET Transistor, P Channel, 38 A, 100 V, 0.06 ohm, 10 V, 4 V

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AUIRF5210STRL - Infineon PCB footprint - Other - Other - AUIRF5210STRL-1
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AUIRF5210STRL Details

  • Manufacturer Part Number:

    AUIRF5210STRL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    38 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRF5210STRL Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the AUIRF5210STRL is -40°C to 150°C.
  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum equivalent series resistance (ESR) of 1 ohm.
  • The recommended input capacitance for the AUIRF5210STRL is 10uF to 22uF, with a voltage rating of 25V or higher.
  • Yes, the AUIRF5210STRL is qualified according to the AEC-Q100 standard, making it suitable for high-reliability applications such as automotive systems.
  • It is recommended to use overvoltage protection (OVP) and undervoltage protection (UVP) circuits to protect the AUIRF5210STRL from voltage transients and faults.

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AUIRF5210STRL Overview

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Part Image AUIRF5210STRL International Rectifier

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF5210STRLPBF International Rectifier

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF5210STRRPBF International Rectifier

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRF5210S International Rectifier

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRF5210STRR International Rectifier

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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