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AUIRF7759L2TR - Infineon

Description: N-Channel 75 V 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8

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AUIRF7759L2TR - Infineon - PCB symbol
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PCB Footprints
AUIRF7759L2TR - Infineon PCB footprint - Other - Other - DirectFET® L8 ISOMETRIC
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3D Models
AUIRF7759L2TR - Infineon - 3D model - Other - DirectFET® L8 ISOMETRIC
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AUIRF7759L2TR Details

  • Manufacturer Part Number:

    AUIRF7759L2TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Malaysia, Mexico, Uk

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Avalanche Energy Rating (Eas):

    257 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.0023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XBCC-N9

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    9

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    640 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRF7759L2TR Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the AUIRF7759L2TR is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • Infineon provides a reference design and layout guidelines in the application note AN2019-01, which should be followed to ensure optimal thermal performance and minimize electromagnetic interference (EMI).
  • To protect the device from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure that the PCB is properly grounded. Additionally, follow proper soldering and handling procedures to prevent damage.
  • Infineon recommends using a dedicated gate driver IC, such as the Infineon 1EDF7171B, and following the recommended circuit topology and component selection guidelines outlined in the application note AN2019-01.

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AUIRF7759L2TR Overview

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