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BC635 - onsemi

Description: NPN Epitaxial Silicon Transistor

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BC635 - onsemi PCB footprint - Other - Other - TO254P508X787-3
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BC635 - onsemi  - 3D model - Other - TO254P508X787-3
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BC635 Details

  • Manufacturer Part Number:

    BC635

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-226AA, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

BC635 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the BC635 is not explicitly stated in the datasheet. However, it's recommended to follow the general guidelines for SOA calculations, considering the device's voltage and current ratings, thermal resistance, and package type.
  • To ensure linear operation, bias the BC635 with a collector-emitter voltage (Vce) between 2-10V, and a base-emitter voltage (Vbe) around 0.65-0.75V. Additionally, ensure the collector current (Ic) is within the recommended range, and the base current (Ib) is limited to prevent saturation.
  • The recommended heatsink for the BC635 depends on the specific application and power dissipation requirements. A general rule of thumb is to use a heatsink with a thermal resistance (Rth) of 10-20°C/W for TO-220 packages. Consult the datasheet and application notes for more specific guidance.
  • While the BC635 can be used as a switch, it's not the most suitable choice due to its relatively low current gain (hFE) and high saturation voltage (Vce(sat)). For switching applications, consider using a transistor with a higher hFE and lower Vce(sat), such as the 2N3904 or 2N2222.
  • To protect the BC635 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, consider adding ESD protection circuits, such as diodes or resistors, to the device's input and output pins.

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Part Image BC635 Continental Device India Ltd

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image BC635,116 NXP Semiconductors

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image BC635 Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image BC635 Vishay Semiconductors

Small Signal Bipolar Transistor

Part Image BC635 NXP Semiconductors

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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